国家/地区 中国（10）
IPC部 C（10）
IPC大类 C01（10） B82（3）
IPC小类 C01B（10）
IPC C01B031/04（9） B82Y030/00（2） B82Y040/00（2）
发明人 LIU C（10）
公开年 2013（6） 2014（3）
申请年 2013（10）
专利权人

Preparation of organic solvent-dispersed graphene material comprises treating by reducing graphene oxide, dispersing reduced graphene oxide, and reacting with alkylating agent.

CHEN Q, LIU C, LI W, WANG W, WU H, ZHAO F, ZHAO G, ZHAO S

Preparing graphene nanowall involves dissolving bivalent metal ion soluble salt, trivalent metal ion soluble salt, weak alkaline substance and polytetrafluoroethylene substrate in deionized water to obtain mix solution.

LIU C, YANG W

Reducing graphene oxide comprises adding graphene oxide to natural organic humus solution, ultrasonically dispersing, subjecting to light source irradiation under inert gas, continuously stirring, centrifugally separating, and freeze-drying.

LIU C, LIU Y, LUO S, WANG L, WANG B, ZHANG S

Synthesizing graphene carbon quantum dot useful for detecting intracellular iron concentration, comprises grinding fullerene and sodium hydroxide, calcining, dissolving solid in water, centrifuging, dialyzing supernatant and freeze drying.

HUANG C, LIU C, GAO M

Preparation of hyperbranched poly(cyclophosphazene)-grafted-graphene by microwave-assisted method involves adding gamma-aminopropyltriethoxysilane and graphene oxide in ethanol concentrated mixture and vacuum drying.

YAN H, LIU C, LI T, FENG S

Preparation of graphene involves preparing graphite oxide acid solution by performing ultrasonic processing of expanded graphite, heating, reducing by microwave digestion using high temperature pressurization, washing, and drying.

ZHANG H, KANG W, LI Z, LIU L, DING H, DING S, XING S, AN M, LIU C, WEI L

Preparation of porous graphene for aluminum-air cell involves carrying out high temperature heat treatment to graphite oxide precursor in muffle furnace, ultrasonically dispersing in alcohol to obtain black suspension liquid, and washing.

ZHOU Y, LIU C

Preparation of highly conductive fluorinated graphene film comprises placing graphene film in vacuum tube furnace, heating, purging with argon gas, introducing fluoride gas, purging with argon gas, and cooling to room temperature.

LIAN R, LIU C

Preparation of graphene material for use in e.g. microelectronics, involves placing carbon nanotubes or amorphous carbon source between electrodes in vacuum chamber, heating source, applying positive pulse voltage, and burning source.

LIU C, LIU H, WAN N

Low-temperature chemical vapor deposition preparation of graphene strip by inserting polished electrolytic copper foil and copper plate into polishing solution, drying with nitrogen, passing hydrogen and liquid carbon and growing graphene.

LIU C, ZHANG Y, ZHANG B