国家/地区 中国（7）
IPC部 H（8）
IPC大类 H01（6） B82（2） C01（2）
H05（2）
IPC小类 H01L（4） B82Y（2） C01B（2）
H05K（2）
IPC C01B032/184（2） H01L033/00（2）
发明人 LIU C（8）
公开年 2023（8）
申请年 2023（8）
专利权人 JIANGXI MTC .（2）

Electronic device e.g. semiconductor memory device, for use in memory system, has gate oxide layer formed between resistance switching layer and gate, source and drain that are arranged on switching layer and spaced apart from each other, and color filter arranged on switching layer.

SHIN H, KIM H, HINTON H J, LIU C, HAM D, JANG H, LEE M

High electron mobility transistor in semiconductor device, has conductive graphene layer disposed between gate metal and first semiconductor structure, and disposed opposite to gate metal, and/or disposed between second semiconductor structure and second semiconductor layer.

YE N, LIU C, ZHANG H, XU H, YAN D, CHEN D

Graphene/MXene composite aerogel material has three-dimensional porous structure and MXene sheet layer attached to thin graphene sheet.

LIU C, ZHANG P, LEI D, LIU J, LI Y

Atomic force microscope based graphical method, involves emitting titanium dioxide beam emitted by UV laser beam on probe on same area as ultraviolet laser beam, so that oxidation graphene area is reduced to be graphene, and to form graphene pattern.

WANG M, LIU C, YAO S, PENG X, ZHANG Z

Cathode sheet used in battery, comprises first coating is arranged on the surface of the current collector superior, and second coating is disposed on side surface of the first coating away from the current collector.

HOU M, LIU C, LIU W, ZHANG M, CAO H

Detection device with broadband photoelectric response, comprises thallium-nickel-selenide nanosheets, which are metal source and drain electrode layers, made by ultraviolet lithography and electron beam evaporation technology, and thallium nickel selenide nanosheet used as photosensitive element.

CHEN X, LI G, ZHANG L, ZHANG S, LIU C, HAN L

Preparing epitaxial wafer used in LED chip, involves providing substrate, growing aluminum nitride layer on substrate sequentially buffer layer, and introducing hydrogen and nitrogen to perform surface treatment to layer before growing buffer layer.

GU W, JIN C, HU J, LV M, LIU C

Silicon-based UV-LED epitaxial structure, comprises buffer layer provided with silicon dioxide layer, silicon nitride layer, graphene layer, and aluminum nitroxide layer that are sequentially arranged on silicon substrate.

JIN C, HU J, LIU C, GAO H, ZHENG W, CHENG L