国家/地区 世界知识产权组织（9）
IPC部 H（7） C（3）
IPC大类 H01（7） C01（3）
IPC小类 H01M（4） H01L（3） C01B（2）
IPC H01L029/16（3） C01B032/184（2） H01L021/324（2）
H01L029/12（2） H01L029/167（2） H01M004/131（2）
H01M004/36（2） H01M004/40（2） H01M004/587（2）
H01M004/62（2） H01M010/052（2）
发明人 LIU P（9）
公开年 2016（2） 2017（2） 2022（2）
申请年 2016（4）  2022（2） 
专利权人 SHENZHEN DAN.（4） SHENZHEN DAN.（2） UNIV CALIFOR.（2）

Material for forming anode, comprises anode-material particles containing internal phase, and surface coating containing carbon, metal oxide, metalloid oxide, metal fluoride, metalloid fluoride, metal phosphate, and/or metalloid phosphate.

LIU H, LIU P, LA O G J

Anode material for lithium-ion battery, comprises porous anode phase comprising silicon, and first solid-state mediator layer containing lithium vanadium oxide material.

LIU H, LIU P

Cathode active material in granular form is useful in cathode sheet for lithium-ion battery.

XU Y, LI J, LI S, CHEN R, LIU C, LIU P

Battery e.g. lithium metal battery, comprises at least two electrodes, electrolyte interposed between electrodes, and acoustic device(s) configured to generate acoustic stream driving turbulent flow during charging and/or discharging.

MANOR O, FRIEND J, HUANG A, LIU P, LIU H, VISWANATHAN K, KRISHNAN V, HUYNH A

Method for manufacturing multi-layered quantum carbon-based semiconductor material, involves adjusting temperature to perform graphitization, and carrying doping with non-metallic material to form quantum dots in multi-layered graphene.

LIU P

Preparing coiled continuous graphene film involves subjecting polyimide film to corona treatment, winding film into coil, and carbonizing under protection of inert gas to form carbon precursor.

LIU P

Thin film transistor (TFT) structure, has first gate insulating layer that is mounted on first channel region, and first gate is mounted on first gate insulating layer.

LIU P

Preparation of multilayer graphene quantum carbon-based two-dimensional semiconductor material involves e.g. sintering polyimide film, removing hydrogen, oxygen and nitrogen atoms from film to form microcrystalline carbon precursor.

LIU P

Preparing graphene film involves laminated polyimide film under pressure at temperature lower than the decomposition temperature of thermoplastic polyimide film to form a carbon graphene films which is carbonized to obtain graphene film.

LIU P