国家/地区 中国（17） 美国（2） 世界知识产权组织（2）
IPC部 C（8） H（8） B（5）
IPC大类 H01（8） C01（5） B01（3）
B82（2） C09（2）
IPC小类 C01B（5） H01M（4） B01J（3）
H01L（3） B82Y（2）
IPC C01B031/04（5） B82Y030/00（2） H01M004/90（2）
发明人 LIU Q（17）
公开年 2013（17）
申请年 2013（15）  2012（2） 
专利权人 CHANGZHOU SI.（5） SIXTH ELEMEN.（4） CHINA ELECTR.（3） 13TH RES INS.（2）
HUNAN ELEMEN.（2） HUNAN ELEMEN.（2） SIXTH ELEMEN.（2）

Preparation of graphene conducting film used in e.g. intelligent mobile phone, comprises dispersing graphene oxide, filtering or coating in solvent to obtain oxidized graphene film, and heating.

QU Y, LI L, LIU Q, XU H

Carbon fiber composite material used for improving mechanical properties, such as toughness and bending strain, comprises carbon fiber coated with graphene modified carbon fiber resin, ensures simple and cost effective production.

QU Y, CAI Y, LIU Q, XU H

Preparation of graphene/platinum nano composite material comprises dispersing graphite oxide in water, adding reducing agent, heating, dissolving graphite precursor and molybdenum in solvent, mixing, heating, filtering, freezing, and drying.

ZHANG Q, LI Y, LIU Q, WANG H, HOU C

Method for preparing carbon-coated graphene that is utilized for manufacturing e.g. super capacitor, involves mixing carbohydrates with oxidized graphene, adding activating agent, drying and activating mixture to obtain finished product.

QU Y, LI L, LIU Q, XU H

Method for manufacturing semiconductor device, involves forming grid medium layer between graphene-containing layer and exposed seed layer using photo resist as mask and forming gate metal on gate dielectric medium to remove photo-resist.

WEI C, LI J, LIU Q, FENG Z, WANG J, HE Z

Preparation of graphene kaolin composite nanometer rubber filler for rubber product, involves crushing kaolin ore materials, modifying with coupling agent, mixing graphene dispersion liquid, ultrasonicating and drying.

LIU Q, LIU Z, ZHU G, DAI K, XU M

Formation method of horizontal graphene PIN junction used in semiconductor device, involves removing corrosion transferring graphene on shielding layer and shielding layer, and obtaining horizontal graphene PIN junction.

WANG J, LI J, LIU Q, WEI C, FENG Z, HE Z

Method for forming horizontal graphene PN junction on thin film crystal of semiconductor device, involves preparing layer of graphite or graphene on silicon carbide substrate, and providing doped graphite alkene with n-type doped grapheme.

WANG J, LI J, LIU Q, WEI C, FENG Z, SONG X, HE Z

Zinc-rich epoxy anti-corrosion paint comprises component containing specified amount of graphene, zinc powder, filler, epoxy resin and solvent, and component containing curing agent.

QU Y, XU H, LIU Q, QU X, MA Y, TIAN Z

Nanometer composite visible photocatalyst comprises porous graphene and tin tungsten oxide in which tin oxide and tungsten is deposited on porous graphene sheet layer.

CAI X, DENG L, HE X, LIU Q, TAN B, XIA L, YE G, YUAN Z