国家/地区 中国（7）
IPC部 H（4） A（3）
IPC大类 H01（4） A61（2）
IPC小类 H01L（4） A61L（2）
IPC H01L021/336（3） A61L027/06（2） H01L021/28（2）
H01L029/78（2）
发明人 LIU X（7）
公开年 2013（3） 2014（2）
申请年 2012（2）  2013（2）  2014（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（7）

Method for modifying surface of medical titanium material, involves preparing graphene film on surface of medical titanium material.

DI Z, WANG G, LI J, LIU X, CHEN D, GUO Q, MA J, XUE Z, ZHANG M

Use of germanium based graphene for producing antimicrobial effect by inhibiting Gram-positive bacteria e.g. Staphylococcus aureus, and Gram-negative bacteria e.g. Escherichia coli, providing anti-fatigue effect and inhibiting tumor.

DI Z, CHEN D, DING G, GUO Q, LI J, LIU X, WANG G, XIE X, ZHANG M, ZHENG X

Graphene FET micro-zone heating method, involves regulating rear gate voltage to modulate edge micro-structure, and performing high-temperature narrow edge micro-structure heating process at temperature of about specific degrees centigrade.

WANG H, XIE X, WU T, XIE H, CHEN J, DENG L, LIU X, SUN Q, ZHANG X

Promoting osteogenesis useful for preparing medicine for treating bone defects and osteoporosis, and exhibiting anti-cancer and anti-aging effect, involves using germanium-graphene.

XIE X, ZHANG M, LI J, YE L, LIU X, DI Z, CHEN D, DING G, GUO Q, WANG G

Tunneling FET unit, has first dielectric layer arranged in graphite layer, insulating barrier layer provided with second dielectric layer that is arranged in top gate electrode, where gate electrode is connected to graphene nanometer belt.

WANG H, XIE X, TANG S, WU T, XIE H, LIU X, SONG Y, SUN Q

Graphene field effect device preparing method, involves forming source electrode and drain electrode in graphene field effect device structure, and connecting source electrode and drain electrode with graphene.

KANG X, LIU X, SUN Q, WANG H, XIE H, XIE X

Method for manufacturing graphene alkenyl electronic field-effect device e.g. complementary metal oxide semiconductor (CMOS) device, involves exposing out portion of gate electrode to form source and drain electrodes.

CHEN Z, LIU X, WANG H, XIE H, XIE X, YU G, ZHANG Y