国家/地区 中国（14）
IPC部 C（7） H（5）
IPC大类 C01（7） H01（5）
IPC小类 C01B（7） H01L（3）
IPC C01B031/04（5） C01B031/00（3） H01L021/336（2）
发明人 LU W（14）
公开年 2015（8） 2016（4） 2017（2）
申请年 2015（14）
专利权人 UNIV ZHEJIAN.（7）

Surface oxide carbon nanotubes array/graphene/manganese dioxide composite electrode used for supercapacitor, comprises conductive substrate, carbon nanotubes array, graphene and manganese dioxide.

XIONG T, ZHANG J, ZOU X, ZHAO N, LU W

Transferring graphene on target substrate e.g. quartz by taking higher melting point metal as metal substrate, pretreating, heating lower melting point metal or alloy, bonding with metal substrate and growing graphene on metal substrate.

FU L, LU W, WANG J, ZENG M, SHAO M

Crucible for growing graphene on silicon carbide sheet, comprises cylindrical crucible body and crucible cap on cylindrical crucible body.

LU W, GUO L, CHEN X

Graphene room temperature terahertz wave detector has graphene whose two edges are connected with logarithm period antenna of specific size, thickness and outside diameter, sapphire substrate, and electrode down-lead.

CHEN X, LIU C, LU W, TANG W, WANG L

Contact graphene/silicon-based barrier field effect transistor (FET) used during manufacture of computer, has graphite electric conduction passage layers that are arranged on power poles mutually contacted with silicon substrate.

CHENG C, GUO H, LI W, LIU W, LIU X, LU W, MA L, MENG N, SHI T, WAN X, WANG F, WANG X, XU Y

High vacuum-type airlock, has shell whose inner wall is fixed with sealing strip that is composed of graphite, carbon fiber and graphene and coated with polyfluoroethylene material, where sealing strip is formed with groove.

LU W, ZHANG Y, ZANG D, ZHANG E

Intelligent Graphene/silicon array temperature humidity sensor, has A/D conversion module transmitting signal to microprocessor module, and electric source module connected with power supply module.

LU W, LUO J, WAN X, XU Y, YU B, WANG F, SHI T

Intelligent graphene modified pressing round large section cable conductor, has adjacent stranding layer covered on copper/aluminum conductor, and outermost layer formed above graphene-copper/aluminum mixing silk conductor.

CHEN D, HUANG M, LU Z, WANG X, ZHOU F, YUAN W, LU W, LAN Y

Preparation of fluorinated graphite/graphene heterojunction involves placing multi-graphene sample in reaction chamber, evacuating pressure, feeding sulfur hexafluoride gas, performing plasma excitation, reacting and removing sample.

CHENG C, GUO H, LI W, LIU W, LIU X, LU W, MA L, MENG N, SHI T, WAN X, WANG F, WANG X, XU Y, ZHOU H

Semi-suspension preparation graphene field effect transistor, has graphene component that is formed and transferred to set with groove of substrate, and metal layer that is formed on surface to form second photoresist image.

FENG Z, LI J, LIU Q, WEI C, LU W, HE Z