国家/地区 世界知识产权组织（8）
IPC部 B（5） C（5） H（4）
IPC大类 B82（4） H01（4） C08（3）
C01（2）
IPC小类 B82Y（4） H01L（4） C08K（3）
C08L（3） C01B（2）
IPC B82Y040/00（3） C08K003/04（3） B82Y030/00（2）
B82Y099/00（2） C01B031/04（2） C08K005/134（2）
C08K005/526（2） C08K013/02（2） C08L023/06（2）
C08L027/18（2） C08L071/00（2） C08L083/08（2）
H01L021/02（2） H01L021/20（2） H01L021/336（2）
发明人 LUO Z（8）
公开年 2012（2） 2017（2）
申请年 2017（3）  2011（2） 
专利权人 LUO Z（3） INST MICROEL.（2） KINGFA SCI .（2） SHANGHAI KIN.（2）
TIANJIN JINF.（2） UNIV PENNSYL.（2） YIN H（2） ZHU H（2）

Composite material for thin film of quantum dot LED comprises graphene of predetermined weight percentage based on one hundred weight percent total weight of composite material.

ZHANG T, XIANG C, ZHU P, LUO Z

Polypropylene composition useful in interior and exterior components of automobiles, comprises polypropylene resin, high-density polyethylene resin, polyolefin elastomer toughening agent, graphene and surface modifying agent.

SHIBING Y, WANG D, XIANBO H, NANBIAO Y, JIAJIE C, ZHENFEI W, LIANG L, YANG B, ZHONGFU L, CHAO Z, ZHENGYA D, YE S, HUANG X, YE N, CHEN J, WU Z, LEI L, LUO Z, ZHANG C, DING Z

Polypropylene composition comprises polypropylene resin, high-density polyethylene resin, dendritic toughening agent, graphene, and surface modifier.

WU Z, WANG D, HUANG X, YE N, CHEN J, YE S, LEI L, YANG B, LUO Z, ZHANG C, DING Z

Device useful for continuous production of graphene composite material comprises e.g. raw material preparing device, reaction device and extraction device for extracting and purifying of crude composite material obtained in reaction device.

HUANG R, JIANG Y, LUO Z, LIANG Y, MA H, CAO J, ZHOU L, LIU X, DAI S

Forming graphene nano-ribbon to form metal-oxide-semiconductor field effect transistor involves forming stack of seed/growth blocking layer on insulating substrate, then patterning and growing graphene nano-ribbon at seed layer side surface.

LIANG Q, LUO Z, YIN H, ZHU H

Semiconductor device, has cap layer set on gate stack and sidewall surrounding gate stack and cap layer, and semiconductor layers epitaxially grown on exposed graphene layer, where metal contact layers are formed on semiconductor layers.

YIN H, LUO Z, ZHU H

Method of fabricating graphenic material used as electrical conductor for devices e.g. display, involves growing sheet of graphene on planarized metallic substrate.

JOHNSON A T, LUO Z, JOHNSON A

Synthesizing a graphene oxide membrane, useful e.g. in a sensor device, comprises exposing a graphite to microwave radiation so as to exfoliate at least a portion of the graphite into a layered structure and oxidizing the layered structure.

JOHNSON A T, LUO Z