国家/地区 中国（45）
IPC部 H（34） B（20） C（6）
G（3）
IPC大类 H01（34） B82（18） C01（4）
C08（3） B01（2） G06（2）
IPC小类 H01M（28） B82Y（18） C01B（4）
C08K（3） C08L（3） B01D（2）
G06F（2） H01B（2） H01G（2）
H01L（2）
IPC B82Y030/00（18） B82Y040/00（18） H01M004/136（14）
H01M004/1397（14） H01M004/36（5） C01B031/04（4）
H01M004/58（4） C08K003/04（3） H01M004/13（3）
H01M004/139（3） H01M004/38（3） H01M004/583（3）
C08K009/02（2） G06F003/044（2） H01B013/00（2）
发明人 MA L（45）
公开年 2014（32） 2015（13）
申请年 2014（45）
专利权人 UNIV ZHEJIAN.（26） INST METAL R.（4） DONGGUAN GRE.（3） BEIJING ZHON.（2）
HARBIN INST .（2） LING H（2） SHENZHEN HOT.（2） UNIV JIANGSU（2）

Composite material for use in producing lithium-ion battery silicon cathode material, comprises graphene and porous nanosilicon composite.

JIANG Z, MA L, ZHANG P, LI C

Transferring large-area graphene by regulating and controlling bonding force, comprises forming transfer medium on surface of large-area graphene positioned on initial matrix, and separating transfer medium/graphene composite film.

CHENG H, MA L, REN W

Increasing organosilicon resin heat resistance involves polymerizing silica-graphene oxide hybrid composite particle, and distilling under reduced pressure.

HUANG Y, JIANG B, LIU L, WU G, WANG F, ZHANG Q, XIE F, MA L

Method for manufacturing large-area high-performance graphene composite transparent conductive film, involves forming interface layer in graphene surface on substrate and transparent conductive film, combining and separating graphene.

CHENG H, MA L, REN W

Preparation of graphene oxide solution used for producing graphene film, involves carrying out hummers method to produce graphene oxide, performing centrifugal washing, adding water, stirring, centrifuging and adding acid or alkali.

MA L

Graphene oxide based electrochemical sensor, has substrate provided with electric conducting layers, reaction area and cover plate that is coated with interval layer, where reaction area is made of graphene oxide.

MA L

Nitride-film type LED flip chip has nitride epitaxy layer that is formed in silicon carbide substrate, and graphene thin layer formed over silicon carbide substrate, and nitride epitaxy layer attached on graphene layer.

HU B, LI J, LIU S, MA L, PEI X

Stable doping large area graphene transparent electric conduction film scale manufacturing method, involves combining transparent substrate with graphite, and separating transparent substrate form initial substrate.

CHENG H, MA L, REN W

SiC substrate based nitride LED thin film flip chip, has nitride epitaxial layer fixed to P-type electrode, and SiC substrate provided with nitride LED epitaxial wafer, where nitride epitaxial layer is connected with graphene layer.

HU B, LI J, LIU S, MA L, PEI X

Method for preparing chemical desiccant utilized for drying and preserving food, involves preparing graphene foam material, dissolving calcium chloride with water, dipping graphene foam material in calcium chloride solution, and drying.

MA L