国家/地区 韩国（8） 美国（6） 中国（4） 世界知识产权组织（2）
IPC部 H（6） C（5） B（3）
IPC大类 H01（6） C01（5） B01（2）
C23（2）
IPC小类 C01B（5） H01L（4） B01J（2）
C23C（2）
IPC C01B031/04（4） H01L027/32（3） H01L051/56（3）
C01B031/02（2） H01L051/50（2） H01L051/52（2）
发明人 MOON J（9）
公开年 2014（4） 2015（4）
申请年 2014（9）
专利权人 LG ELECTRONI.（3） ELECTRONICS .（2） MOON J（2） UNIV SEOUL N.（2）

Transferring graphene layer, comprises e.g. producing self-assembled monomolecular layer on first substrate, producing adhesive layer and supporting layer on monomolecular layer, and removing first substrate and monomolecular layer.

LIM J T, LEE H, LEE J I, CHU H Y, KWOM B H, MOON J, KIM J Y, YU B G, HAN J H

Reactive catalyst used for producing hydrogen, comprises N-doped graphene sheet which is formed by chemically-depositing graphene layer on metal catalytic layer under nitrogen atmosphere.

HONG B H, NAM K T, MOON J, SIM U, AN J

Producing N-doped graphene quantum sheet, comprises applying nitrogen plasma on single-layer graphene formed on catalyst layer using chemical vapor deposition process.

HONG B H, MOON J

Method for manufacturing self light-emitting device, involves contacting graphene layer of graphene donor unit with organic part, and removing release layer and elastic stamp layer from graphene donor unit.

LIM J T, LEE J I, CHU H Y, AHN J T, LEE J, HAN J, OH J, YU B G, MOON J, CHO N S, HAN J H, OH J Y

Electron collector structure used for electrode for lithium battery, comprises conductive thin film and graphene layer coated on surface(s) of conductive thin film.

PARK H, KWON S, PARK D, CHOI J, KIM J, KIM M, MOON J, KIM K, PARK H E, KWON S Y, PARK D H, CHOI J S, KIM J H, KIM M H, MOON J H, KIM K H

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Organic electroluminescent device display for use in light emitting device, has getter positioned inside sealing cap and comprising graphene layer.

JUNG M, CHOI M, KIM T, MOON J, KIM T H

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

FET e.g. graphene heterostructure FET of integrated circuit, has gate dielectric layer that is provided between gate and fluorographene layer and ohmic contacts, and fluorographene and graphene layers forming normally off channel.

MOON J