国家/地区 韩国（12） 中国（7） 美国（7） 世界知识产权组织（5） 欧洲专利局（EPO）（2）
IPC部 C（10） B（9） H（5）
IPC大类 C01（10） B01（4） H01（4）
C23（3） B32（2） B41（2）
H05（2）
IPC小类 C01B（10） B01J（4） C23C（3）
H01L（3） B32B（2） B41M（2）
H05B（2）
IPC C01B031/02（10） C01B031/04（4） B01J019/18（3）
B41M005/10（2） C23C016/26（2）
发明人 MOON J（13）
公开年 2014（13）
申请年 2013（8）  2014（4） 
专利权人 LG ELECTRONI.（12） MOON J（3） JUNG M（2）

Manufacture of graphene as base material for electronic circuits, carbon-based electronic device and electromagnetic device, involves forming metal layer on thermal expansion compensation substrate, and forming graphene on metal layer.

CHOI M, KIM T, MOON J, JUNG M, KIM T H

Organic electroluminescent device display for use in light emitting device, has getter positioned inside sealing cap and comprising graphene layer.

JUNG M, CHOI M, KIM T, MOON J, KIM T H

Doping of graphene used for preparing doped graphene, involves forming dopant using graphene flakes, and doping graphene using dopant.

CHOI M, KIM T, MOON J, JUNG M

Producing patterned graphene used in touch panel, comprises etching graphene using an ink pattern, drying the ink pattern, forming the ink pattern including a conductive material or dopant on graphene, and forming graphene on a substrate.

JUNG M, CHOI M, KIM T, MOON J

Producing doped graphene, comprises forming a carbon donor layer including a dopant on a substrate, forming a protective layer on the carbon donor layer, and heating the carbon donor layer.

CHOI M, KIM T, MOON J, JUNG M

Device useful for producing graphene, comprises a chamber loaded with catalytic metal, having gas inlet and outlet, and a thermal expansion compensating unit to compensate difference of thermal expansion of graphene and catalytic metal.

MOON J, KIM T, CHOI M, JUNG M

Apparatus useful for manufacturing graphene, comprises source decomposition unit to decompose carbon source set on one side of a forming chamber, and a feeding unit to supply catalyst metal via source decomposition unit and forming chamber.

MOON J, KIM T, CHOI M, JUNG M

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

FET e.g. graphene heterostructure FET of integrated circuit, has gate dielectric layer that is provided between gate and fluorographene layer and ohmic contacts, and fluorographene and graphene layers forming normally off channel.

MOON J

Manufacture of graphene electromagnetic wave blocking plate involves forming primary and secondary graphene layers above and below metal layer, attaching substrate on secondary graphene layer, forming pattern and removing substrate.

JUNG M, MOON J