国家/地区 美国（9）
IPC部 B（6） C（6） H（6）
IPC大类 C01（6） H01（4） C23（3）
B01（2） B32（2） B82（2）
H05（2）
IPC小类 C01B（6） H01L（4） C23C（3）
B01J（2） B32B（2） B82Y（2）
H05B（2）
IPC C01B031/04（5） C01B031/02（3） C01B032/194（3）
C23C016/26（3） H01L029/16（3） B01J019/18（2）
B82Y040/00（2） C01B032/182（2） C01B032/186（2）
H01L029/167（2）
发明人 MOON J（9）
公开年 2014（5） 2018（2）
申请年 2013（3）  2014（2）  2016（2） 
专利权人 LG ELECTRONI.（7） MOON J（3） JUNG M（2） SNU R DB FO.（2）

Etchant composition to manufacture graphene with low sheet resistance, comprises sulfuric acid, hydrogen peroxide, purified water, N-heterocyclic aromatic compound e.g. benzotriazole, and aromatic boric acid e.g. phenyl boric acid.

MOON J, KWON Y, WOOK Y B, LEE S M, MOON S I, KIM K S, LEE G H, HYUN D, SIMSUJIN, SHIM S J, HYUN D S, YOO B W, KWON Y D, MOON J T

Preparation of multi-doped graphene involves mixing metal-based dopant and at least one organic-based dopant to prepare doping solution, stacking graphene layer on substrate, and doping graphene layer with doping solution.

JUNG M, BYUN N, MOON J, MYNGHEE J, NAMI B, JINSAN M, WEN Z

Graphene heating apparatus, has graphene layer arranged on bonding layer that is arranged on transparent substrate, where graphene layer applies fixed voltage for being heated with current flowing according to graphene layer.

MOON J, JINSAN M, WEN Z

Doping method of graphene for manufacturing graphene composite electrode and graphene structure, involves forming precursor polymer layer for doping on substrate, and positioning graphene on substrate.

MOON J, PARK W, PARK S, JO I, HONG B, SAN MOON J, SU C I, BAE P W, BEOM P S, HUI H B, ZHENSHAN W, WONBAE P, SUBEOM P, INSU J, BYUNGHEE H

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

FET e.g. graphene heterostructure FET of integrated circuit, has gate dielectric layer that is provided between gate and fluorographene layer and ohmic contacts, and fluorographene and graphene layers forming normally off channel.

MOON J

Manufacture of graphene electromagnetic wave blocking plate involves forming primary and secondary graphene layers above and below metal layer, attaching substrate on secondary graphene layer, forming pattern and removing substrate.

JUNG M, MOON J

Formation of graphene for electronic device, involves forming graphene layer on catalytic metal layer, forming organic-inorganic hybrid film in uncured state on graphene layer, and curing.

MOON J, JUNG K, KANG E, KANG O, JEONG G, KANG E S

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J