国家/地区 韩国（7） 美国（4） 日本（3） 中国（2）
IPC部 B（5） H（5） C（4）
IPC大类 H01（5） B82（3） C01（3）
B01（2）
IPC小类 H01L（4） B82Y（3） C01B（3）
B01J（2）
IPC C01B031/02（3） H01L021/336（3） H01L029/16（3）
H01L029/78（3） B01J019/18（2） B82Y099/00（2）
H01L029/06（2） H01L029/417（2） H01L029/772（2）
H01L029/778（2） H01L029/786（2）
发明人 PARK S（7）
公开年 2013（5）
申请年 2012（7）
专利权人 INHA IND PAR.（3） SAMSUNG ELEC.（3）

Manufacture of reduced graphene oxide used for transparent electrodes of e.g. storage batteries, involves dispersing graphene oxide in solvent to obtain dispersion solution, adding ammonia borane to dispersion solution, and refluxing.

PARK S, HAN J W

Preparing carbon nitride-graphene complex useful as catalyst in oxygen reduction reaction for fuel cell, comprises preparing graphite oxide dispersion solution, and adding cyanamide to dispersion solution and refluxing.

PARK S, OH J H

Manufacture of boron-doped reduced graphene oxide used for electrode of capacitor, involves dispersing graphene oxide into aqueous solvent, adding borane-tetrahydrofuran to obtained dispersion solution, then refluxing, and cooling.

PARK S, HAN J W

Manufacturing graphene electronic device involves making metal compound layer and catalyst layer on substrate, growing graphene layer on the catalyst layer, and converting the catalyst layer into a portion of the metal compound layer.

LEE C S, KIM S W, PARK S J, SEO D, YUN Y J, LEE Y H, LEE C, PARK S, YUN Y

Electrode structure for semiconductor device e.g. FET used in electronic device, has graphene layer that is configured to contact one of semiconductor layer and electrode containing metal.

YANG H, PARK S, CHUNG H, HEO J, YANG H J, PARK S J, CHUNG H J, HEO J S, HUH J, JUNG H

Graphene switching device with tunable barrier used as diode, triode, or transistor has graphene layer which is formed between semiconductor layer and gate substrate.

HEO J, CHUNG H, SONG H, PARK S, SEO D, YANG H, HEO J S, JEONG H J, SONG H J, PARK S J, DAVID S, YANG H J, CHUNG H J, HUH J, SONG C, SERIO D, JUNG H

Semiconductor sealing material composition used as packaging material to protect electronic part e.g. diode comprises epoxy resin; hardener; curing catalyst; additive such as coupling agent; and nano-graphene plate powder as filler.

CHOI S, PARK S, CHOI S H, PARK S H, HONG C S, HUI P S