国家/地区 中国（32）
IPC部 C（23） H（5） B（3）
G（3）
IPC大类 C01（14） C23（11） H01（5）
C30（3） G01（3） B08（2）
IPC小类 C01B（14） C23C（11） C30B（3）
G01N（3） H01M（3） B08B（2）
H01L（2）
IPC C23C016/26（9） C01B032/186（6） C01B032/194（5）
H01M004/66（3） H01M010/0525（3） B08B007/00（2）
C01B032/196（2） C23C016/02（2） C23C016/54（2）
C23C016/56（2） C30B029/02（2） G01N013/02（2）
H01L021/02（2） H01M004/13（2）
发明人 PENG H（32）
公开年 2021（9） 2018（6） 2019（6） 2020（6） 2022（4）
申请年 2019（10）  2018（9）  2020（7）  2021（6） 
专利权人 BEIJING GRAPHENE INST（32）

Preparing a metal wafer substrate involves forming metal thin film on the sapphire substrate by magnetron sputtering, and annealing under mixed atmosphere of hydrogen and argon.

PENG H, YANG Y, CAO Y, TANG J, YAN R, DU Y

Method for evaluating hydrophilicity of graphene film, involves obtaining topography of water droplets on surface of graphene film by environmental scanning electron microscope and calculating or directly measuring contact angle of water droplet through topography diagram.

ZHANG X, CHEN H, LIU X, LIN L, JIA K, ZHANG J, PENG H, LIU Z

Method for transferring single crystal wafer graphene film to target substrate e.g. silicon sheet, involves removing heat release adhesive tape and each adhesive layer in composite layer after drying obtained heat release tape/auxiliary support layer/terpenoid small molecular layer.

LIU Z, XIE Q, CAI A, YAN R, WANG M, GAO X, LIN L, ZHENG L, HU Z, PENG H

Preparation method of a large domain graphene single crystal, involves annealing sapphire/metal substrate with oxygen-containing gas and providing growth gas according to mode of increasing proportion gradient of growth gas, and growing on sapphire/metal substrate to obtain graphene single crystal.

LIU Z, PENG H, CAO Y, WANG Y, DU Y, TANG J, YAN R

Method for evaluating cleanliness of graphene film, involves judging cleanliness of graphene film surface by size of contact angle of water and graphene film and referring cleanliness to clean area of graphene film surface.

ZHANG M, LI G, CHEN H, ZHANG J, ZHANG Y, PENG H, LIU Z

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Carrier for batch preparation of graphene film comprises supporting plates for placing substrate for growing graphene, heating plates for heating substrate, and electrode assembly connected with heating plates.

ZHU Y, MA Z, GAO X, SHAN J, JIA K, PENG H, LIU Z

Preparing clean double-layer and few-layer graphene film, comprises placing substrate in atmosphere containing first oxidizing gas, annealing, placing substrate in reaction mixed gas containing reducing gas, a carbon source and a second oxidation gas, and heating to growth temperature.

LI G, ZHANG Y, LIU X, ZHANG M, GAO X, ZHANG J, PENG H, LIU Z

Improving cleanliness of graphene film comprises subjecting graphene film to high-temperature treatment in vacuum environment, and carrying out chemical vapor deposition method.

CHEN H, XUE R, LIU X, ZHANG J, LI G, PENG H, LIU Z

Transferring graphene film comprises e.g. providing first graphene composite structure, removing base layer of first graphene composite structure to obtain second graphene composite structure, and removing buffer layer.

PENG H, GAO X, ZHENG L, LIN L, LIU Z, HU Z, YAN R, YANG H