国家/地区 韩国（11）
IPC部 C（11） B（7） H（2）
IPC大类 C01（11） B01（5） C23（3）
H01（2）
IPC小类 C01B（11） B01J（5） C23C（3）
IPC C01B031/02（11） B01J019/08（3） C23C016/26（2）
发明人 SEO B（11）
公开年 2013（11）
申请年 2012（11）
专利权人 LG ELECTRONI.（11）

Manufacture of nanopattern-containing graphene involves forming nanobead layer on oxide graphene layer, separating gap between nanobeads, forming metallic layer on oxide graphene layer, and forming nanopattern by etching graphene layer.

BYUN N, LEE D, LEE S, SEO B

MManufacturing three-dimensional structure of graphene useful in flexible display, comprises preparing mold, forming graphene layer on mold, forming support structure for covering first and second sides on graphene layer, and removing mold.

LEE S, BYUN N, JUNG M, LEE D, SEO B

Manufacture of graphene powder involves drying graphene oxide solution, and reducing obtained graphene oxide powder using vaporized reducing agent.

LEE D, LEE S, SEO B, BYUN N

Manufacture of graphene oxide powder involves spraying graphene oxide solution and drying sprayed solution.

LEE D, LEE S, SEO B, BYUN N

Device used for manufacture of graphene, has chamber having inlet portion, and exhaust portion, substrate positioned within chamber and heating unit.

PARK W, JUNG M, RHO J, SEO B, MOON J

Apparatus, useful for growing graphene that is used in display device, comprises substrate positioned within chamber, heating portion heating substrate, and supply unit supplying induced current to heating unit.

PARK W, JUNG M, RHO J, SEO B, MOON J

Manufacture of graphene involves coating graphene oxide solution on substrate, drying coated graphene oxide solution on substrate, forming graphene oxide flakes, and growing graphene.

RHO J, PARK W, JUNG M, SEO B, MOON J

Device, useful for producing graphene, comprises a current supply unit for supplying current to a formation area through a contact unit, and a storage unit that receives metal catalyst in roll state, where contact unit contacts chamber.

RHO J, PARK W, JUNG M, SEO B, MOON J

Producing a doped graphene, used in e.g. auxiliary electrode, comprises forming doped graphene layer, positioning support layer, removing metal layer, adding dopants and positioning substrate layer and then removing support layer.

RHO J, LEE S, JUNG M, MOON J, SEO B, PARK W

Method for doping graphene layer for doped graphene film, involves forming catalytic metal layer on graphene layer, placing dopants on substrate, removing metal layer, providing graphene layer on substrate, and removing support layer.

JUNG M, RHO J, SEO B, MOON J