国家/地区 韩国（6） 美国（4） 中国（2） 日本（2）
IPC部 H（5） B（4） C（4）
IPC大类 H01（5） C01（4） B82（3）
C23（3） B01（2）
IPC小类 C01B（4） B82Y（3） C23C（3）
H01L（3） H01B（2）
IPC C01B031/02（4） B82Y030/00（3） B82Y040/00（3）
C01B031/04（3） C23C016/26（3）
发明人 SEO D（6）
公开年 2011（6）
申请年 2010（4） 
专利权人 SAMSUNG ELEC.（5）

Electric conductor for use in e.g. electric component, has laminating structure for laminating conductive oxide layer i.e. transparent conductive oxide layer, and graphene layer, where graphene layer is repeatedly laminated by turns.

JEON S H, SEO S A, SONG I H, KIM C J, SEO D

Graphene electronic device i.e. FET, for use in gas sensor, has interlayer dielectric formed on silicon substrate, insulating layer formed on interlayer dielectric, and graphene layer formed on insulating layer.

CHUNG H, BAEK S, SEO S, WOO Y, HEO J, SEO D, CHUNG H J, BAEK S J, SEO S A, WOO Y S, HEO J S

Manufacture of graphene involves obtaining forming graphite intercalation compound using alkaline metal or its ion, or alkaline earth metal or its ion, and dispersing graphite intercalation compound.

JEON S, KANG K, KWON J, PARK K, SEO D, JEON S W, KANG K S, KWON J Y, PARK K H, SEO D H, HWA S D, SEOK G G, YEONG K J, U JEON S

Manufacture of graphene layer used for electronic circuit, involves mounting molecular beam epitaxy chamber on substrate and forming graphene layers by supplying carbon source on substrate.

SEO D

Method of transferring larger-sized graphene used in electric circuit, involves removing adhesive and protection layers from graphene layer respectively.

BAE S, CHUNG H, HEO J, JUNG M, KANG S, SEO D, SEO S, WOO Y, BAE S K, CHUNG H J, HEO J S, JUNG M H, KANG S R, SEO S A, WOO Y S, JUNG H J, HUH J S, YEO R, HUH J, JUNG H

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H