国家/地区 中国（31） 美国（5） 韩国（3） 台湾（3） 德国（2）
IPC部 G（13） B（11） H（10）
C（8）
IPC大类 G01（12） H01（9） B32（6）
C08（5） B01（3） C02（2）
G02（2）
IPC小类 B32B（6） G01N（6） C08L（4）
H01L（4） C08K（3） G01K（3）
G01R（3） H01Q（3） B01J（2）
C02F（2） C08J（2） G01J（2）
G02B（2）
IPC B32B009/00（6） B32B009/04（6） B32B003/30（5）
B32B015/02（4） G01N021/01（4） B32B015/20（3）
B32B027/28（3） B32B027/36（3） C08K003/04（3）
G01N021/41（3） H01L029/66（3） H01L029/78（3）
H01Q017/00（3） B32B003/24（2） B32B015/09（2）
发明人 SHEN T（33）
公开年 2021（15） 2020（7） 2018（3） 2022（3） 2013（2） 2023（2）
申请年 2020（13）  2021（9）  2019（3）  2018（2）  2022（2） 
专利权人 UNIV HARBIN .（11） DONGGUAN YON.（6） TAIWAN SEMIC.（3） UNIV NANJING.（2）

Preparing composite material modified ternary anode material useful in lithium battery, comprises e.g. preparing lithium-zirconium-based material, adding carbonaceous material, performing first material modification operation, and adding silane-containing coupling agent and ternary anode material.

LI T, CAO W, YAN Z, SHEN D, SHEN T

Preparation of sulfonated graphene quantum dot functionalized two-dimensional layered film for single/multivalent ion separation, involves preparing graphene quantum dot by pyrolyzing of citric acid, hydrothermally reacting with sulfonated reagent, and depositing with nanosheet dispersion.

LI J, YUAN C, SHEN T, ZHOU C, GU L, RAN J, GU J, CUI P

Frequency band width/narrow adjustable terahertz absorber, has lower optical medium layer tiled on metal substrate layer in filling manner, graphene layer paved on lower medium layer, and upper optical medium paved on graphene layer.

SHEN T, CHEN J, CHEN Z

Semiconductor device, comprises substrate and fin structure on substrate, and includes epitaxial region, etch stop layer on epitaxial region, interlayer dielectric layer on etch stop layer, and metal contact through etch stop layer and interlayer dielectric layer.

SHEN T, HUANG J, CHEN S, LIN H, LIN C, WOON W, KHADERBAD M A

Gas sensor based on double-layer graphene doped titanium dioxide, has air inlet that enters gas to be detected, and gas outlet that discharges detected gas, and light beam is output to spectrum analyzer to enter demodulation module.

SHEN T, YAN X

Wearable plastic for use in e.g. home appliance, has silicon carbide wearable layer arranged on outer surface of graphene radiating layer, where hardness of silicon and boron nitride wearable layers is not less than specific value.

SHEN T, ZHOU B, LI Z

Insulating plastic with high impact resistance and inflaming retarding for mobile phone protection shell, has polycarbonate material layers whose outer surfaces are provided with arc groove and arc-shaped bulge.

SHEN T, ZHOU B, LI Z

Method for forming semiconductor device, involves configuring gate structure, source and drain components, semiconductor structure and two-dimensional material layer, and utilizing semiconductor structure and two-dimensional material layer as channels between source and drain components.

SHEN Z, KHADERBAD M A, MA H, SATHAIYA D M, ABHIJITH K M, SHEN T, DHANYAKUMAR S M

Preparing non-modification and recyclable photothermal driven self-repairing epoxy anticorrosive coating material comprises e.g. mixing bisphenol A epoxy resin monomer and acid anhydride curing agent, adding photothermal filler to reaction solution, coating casting liquid on substrate, and cooling.

ZHAO S, SHEN T, LI W

Preparing shape memory composite material with both electrical and temperature response used as cell immobilization carrier in fermentation production of L-lysine comprises e.g. mixing thermoplastic polyurethane and two-dimensional graphene.

YING H, SHA Y, ZHUANG W, ZHU C, LI M, OUYANG P, CHEN Y, LIU D, SHEN T, TAN Z