国家/地区 美国（6） 韩国（4） 中国（3）
IPC部 H（5） B（2） C（2）
IPC大类 H01（5） B32（2） B82（2）
C01（2）
IPC小类 H01L（5） B32B（2） B82Y（2）
C01B（2）
IPC H01L029/16（5） H01L029/78（4） H01L021/02（3）
H01L029/778（3） B82Y030/00（2） B82Y040/00（2）
C01B031/04（2） H01L021/336（2） H01L029/06（2）
H01L029/165（2） H01L029/267（2） H01L029/66（2）
发明人 SHIN H（6）
公开年 2014（3） 2015（3）
申请年 2014（6）
专利权人 SAMSUNG ELEC.（6） LEE J（2） LEE M（2） SHIN H（2）

Graphene-metal bonding structure for semiconductor device has intermediate material layer which forms edge-contact with metal layer from boundary portions of material contained in intermediate material layer that contacts metal layer.

LEE J, SHIN H, LEE M, LEE C, LEE J H, SHIN H J, LEE M H, LEE C S, LI M

Inverter e.g. vertical-type inverter, has second transistor that includes second channel unit including second graphene layer and n-type second two-dimensional (2D) semiconductor layer contacting second graphene layer.

HEO J, PARK S, SHIN H, HEO J S, PARK S J, SHIN H J

Graphene device e.g. FET, has gate electrode for applying electric field to graphene channel layer, and junction contact layers for contacting portions of channel layer, where contact layers are electrically separated from each other.

LEE J, BYUN K, SONG H, SHIN H, LEE M, YOO I, PARK S, LEE J H, BYUN K E, SONG H J, SHIN H J, LEE M H, YOO I K, PARK S J, SONG C, LI M

Graphene device used for electronic apparatus e.g. semiconductor device, consists of active layer, graphene layer, and electrode spaced apart from graphene layer and controls work function of graphene layer based on applied voltage.

SHIN H, BYUN K, SONG H, PARK S, SEO D, WOO Y, LEE D, LEE J, CHUNG H, HEO J, YOO I, SHIN H J, BYUN K E, SONG H J, PARK S J, WOO Y S, LEE D W, LEE J H, CHUNG H J, HEO J S, YOO I K, JIN S H, EUN B G, JAE S H, JUN P S, SEOK S H, SEONG W Y, GYEONG Y I, UK L D, HO L J, JONG J H, SEONG H J, HUI D, HUH J, YEO R, JUNG H

Graphene shell used as e.g. hydrogen storage medium, is obtained by forming graphitized catalyst, forming polymeric coating on graphitized catalyst and heat-treating in inert or reduced atmosphere.

CHOI J, SHIN H J, YOON S, SHIN H

Graphene-layered structure, useful in solar cells, transistor and in transparent electrode, comprises ion implantation layer in silicon carbide thin film, and graphenized silicon carbide surface layer on the ion implantation layer.

SHIN H, CHOI J, AHN J, SEO J