国家/地区 中国（7）
IPC部 C（6）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B031/04（4）
发明人 SUN L（7）
公开年 2012（4） 2011（3）
申请年 2011（7）
专利权人 UNIV SOUTHEA.（4） UNIV HEILONG.（2）

Graphene nano hole structure for carrier, has carrier table whose top surface comprises concentric circular holes, and copper mesh or silicon nitride layer formed on surface of carrier.

HE L, XU F, XU T, YIN K, SUN L, XIE X

Graphene casting by pouring graphene oxide dispersion in hydrothermal reactor cup, adding ammonia or sodium hydroxide, heating to obtain graphene gel, and drying.

BI H, SUN L, XU F, WAN N, YIN K

Preparing graphene nanopore comprises providing graphene suspension on a carrier, placing the carrier in transmission electron microscope and converging at electron beam bombardment and protecting the pore by protective gas.

HE L, SUN L, XIE X, XU F, XU T, YIN K

Synthesizing large area graphene with controllable number of layers by low-temperature chemical vapor deposition of polystyrene, useful in anti-radiation electronic devices, comprises taking substrate, heating polystyrene, growing graphene.

SUN L, WU T, SHEN H

Preparation of mesoporous carbon and graphene composite material involves dissolving graphite oxide in solvent, adding surfactant, performing pre-carbonization, and performing heat treatment.

WNG L, SUN L, FU H, TIAN G, TIAN C, MU G

Preparation of nitrogen-doped graphene material involves dissolving graphite oxide into solvent, adding into surfactant, adding into nitrogen-containing compound, carrying out hydrothermal reaction, washing, and drying.

WNG L, SUN L, FU H, TIAN G, TIAN C, MU G

Preparation of graphene three-dimensional solid involves mixing graphene oxide with water, and stirring or ultrasonically dispersing for forming graphene oxide solution, and reacting with alkaline solution.

XU F, WAN N, YIN K, SUN L, BI H