国家/地区 中国（6） 世界知识产权组织（4） 美国（3） 日本（2）
IPC部 C（6） B（3） H（2）
IPC大类 C01（5） C23（5） C30（3）
B82（2） H01（2）
IPC小类 C01B（5） C23C（5） C30B（3）
B82Y（2） H01L（2）
IPC C23C016/02（4） C23C016/26（4） C01B031/04（3）
B82Y040/00（2） C01B032/186（2） C23C014/06（2）
C23C016/50（2） C30B023/00（2） C30B025/00（2）
C30B029/02（2）
发明人 TANG S（7）
公开年 2012（3） 2015（2）
申请年 2011（2）  2013（2）  2015（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（7）

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparing graphene nano belt used for preparing electronic devices, involves carrying out metal catalyzed etching method to obtain nano strip shaped groove structure set with hexagonal boron nitride groove module.

HE L, JIANG M, LI L, XIE X, TANG S, ZHANG D, XIE H, WANG H, CHEN L

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H

Tunneling FET unit, has first dielectric layer arranged in graphite layer, insulating barrier layer provided with second dielectric layer that is arranged in top gate electrode, where gate electrode is connected to graphene nanometer belt.

WANG H, XIE X, TANG S, WU T, XIE H, LIU X, SONG Y, SUN Q

Method for growing graphene through chemical vapor phase deposition, involves using poly-benzene ring aromatic hydrocarbons as carbon source and using carbon source decomposition method or spin-coating method of carbon source.

DING G, JIANG M, SHEN H, SUN L, TANG S, WU T, XIE X

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X