国家/地区 日本（4） 美国（4）
IPC部 H（5） B（3） C（3）
IPC大类 H01（5） B82（3） C01（2）
IPC小类 H01L（5） B82Y（3） C01B（2）
IPC H01L023/532（5） H01L021/3205（4） H01L021/768（4）
H01L021/28（3） H01L021/285（3） H01L023/48（3）
B82Y030/00（2） C01B031/02（2）
发明人 WADA M（5）
公开年 2013（5）
申请年 2011（2）  2012（2） 
专利权人 TOSHIBA KK（5） KITAMURA M（2） SAKAI T（2） WADA M（2）
YAMAZAKI Y（2）

Conductive film, useful in a semiconductor device such as a photoelectric conversion device including a solar cell, comprises a fine catalytic metal particle as a junction, and a graphene extending in a network form from the junction.

YAMAZAKI Y, WADA M, SAITO T, SAKAI T

Manufacturing method of semiconductor device, involves forming graphene layer on catalyst layer after planarizing exposed surface of catalyst layer by oxidation-treating.

YAMAZAKI Y, KATAGIRI M, SAKAI T, SAKUMA H, KITAMURA M, SAKATA A, WADA M, KAJITA A, MIZUSHIMA I, SAKUMA N

Wire used in semiconductor device, has graphene wires formed on metal part and electrically connected to metal film on substrate, in which metal film and metal part are formed using different metals or alloys.

YAMAZAKI Y, WADA M, KITAMURA M, SAKAI T

Semiconductor device e.g. LSI, has catalyst metal film on substrate and processed with specific plasma, graphene formed on metal film, interlayer insulation film and carbon nanotube provided in contact hole penetrating insulation film.

KATAGIRI M, YAMAZAKI Y, SAKAI T, SAKUMA H, SUZUKI M, WADA M

Semiconductor device has graphene layers which include multiple graphemes laminated perpendicularly with respect to the corresponding side surfaces of core of wiring.

WADA M, YAMAZAKI Y, KAJITA A, SAKATA A