国家/地区 中国（18）
IPC部 C（18）
IPC大类 C01（18） B01（2） B82（2）
C23（2）
IPC小类 C01B（18）
IPC C01B031/04（16） B82Y030/00（2） C01B032/19（2）
发明人 WANG C（18）
公开年 2015（18）
申请年 2015（15）  2014（3） 
专利权人 UNIV QINGDAO.（6） UNIV HEILONG.（5）

Preparation of graphene film on titanium or titanium alloy surface used as implant material, involves growing graphene film on metal base material, covering with plastic film, placing in dissolution medium, and attaching to titanium.

BI L, HAN Y, LI K, WANG C, ZHANG Z, YAN J, DIWU W

Preparation of polyvinylpyrrolidone/graphene composite nanofiber material involves mixing solution of graphene oxide and polyvinylpyrrolidone under high-energy ionizing radiation, reducing graphene oxide, and electrostatic spinning.

CAO X, CHANG J, CHANG Q, MA D, WANG C, WANG S, WANG P, ZHAO H, CAI Z, LI M

Preparation of multi-layer graphene thin film by forming polymeric support layer on metal layer, growing on surface of graphene film, dissolving to metal layer, doping, covering to another graphene film, and covering to substrate.

CAI W, FANG X, CHEN X, WANG C

Graphene modifying agent comprises organic solvent, substituted benzoate and substituted ethane or organic derivative, and is prepared by mixing modifier and graphene with organic solvent to obtain graphene and organic component mixture.

XIE S, WANG C, DENG C

Solid-phase calcining of graphene by mixing graphene oxide with water and dispersant, dispersing, adding concentrated aqueous ammonia, sodium hydroxide or hydrochloric acid solution, dispersing, calcining, and adding dissolving agent.

GUO H, WANG C, ZHOU J, CHU L, SUN Y, WEN S

Preparation of amorphous silicon graphene-like nanosheet used as semiconductor material for photocatalytic hydrogen production involves mixing magnesium powder and silica, air sintering in the presence of hydrogen/argon gas and pickling.

HU B, MENG Y, SHI W, YAN Y, LIU J, WANG C, CAI F

Preparation of three-dimensional graphene/carbon nanotube composite beads involves reacting dispersed phase solution including treated carbon nanotube powder and graphene oxide, curing, washing, drying and carbonizing obtained droplets.

CAO X, SUN L, WANG C, ZHANG Y, ZHAO D

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Production of high-speed stirred bead porous graphene comprises mixing polyvinylpyrrolidone powder, graphene dry powder and silicon dioxide microsphere dry powder, mixing with deionized water, and dipping hydrofluoric acid solution.

LIU H, SUN L, WANG C, ZHANG Y, CANG L

Preparation of high-quality graphene conductive film involves centrifuging aqueous solution of graphene, redispersing in solvent, obtaining dilute dispersion of graphene, ultrasonically processing, polishing graphene film and heating.

LIU R, WANG C, ZONG C, ZONG Y