国家/地区 中国（4）
IPC部 H（3） C（2）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L021/336（2） H01L029/78（2）
发明人 WANG P（4）
公开年 2011（2）
申请年 2010（4）
专利权人 UNIV FUDAN（3）

Method for preparing graphene nano carrier for magnetic resonance imaging (MRI) contrast agent, involves grafting high-hydrophilic polymer on surface of nano graphene oxide.

SHEN A, ZHAO Z, DONG H, WANG P, LI Y

Method for depositing high dielectric constant material on graphene surface atomic layer in manufacture of integrated circuit, involves applying electric field to cavity in which silicon substrate with graphene is placed.

WANG P, ZHANG W, JIANG T, SUN Q

Graphene transistor used in carbon based integrated circuit, has graphene layer that is isolated between second insulator layer and gate electrode through air gap.

WANG P, ZHANG W, JIANG A, JIANG T, SUN Q

Graphene metal oxide semiconductor (MOS) transistor for graphene-based integrated circuit, has gate region arranged on trench region while gate medium is arranged between gate region and trench region.

WANG P, ZHANG W, LIU H, GU J