国家/地区 中国（5）
IPC部 H（5）
IPC大类 H01（5）
IPC小类 H01L（5）
IPC H01L045/00（2）
发明人 WU D（5）
公开年 2011（3） 2010（2）
申请年 2011（3）  2010（2） 
专利权人 UNIV FUDAN（5）

Gate oxide medium forming method for graphene FET in graphene apparatus, involves forming metal contact graphene layer, depositing atom layer to grow boron nitride as gate oxide medium, and arranging gate electrode on gate oxide medium.

SUN Q, WANG P, WU D, ZHANG W, ZHOU P

Method for preparing graphene FET, involves generating photoconduction effect in radiation of infrared ray by graphene channel layer.

ZHOU P, ZHANG W, WU D, SUN Q

Graphene FET for use in infrared detector for sky survey infrared detection application, has graphene channel layer generating photoconductive effect under infrared radiation and provided with multiple layers of graphite.

ZHOU P, ZHANG W, WU D, SUN Q

Disposable programmable storage unit for disposable programmable storage has graphene oxide layer which is disposed between upper electrode and lower electrode, and used as storage medium layer.

ZHOU P, ZHANG W, WU D, SUN Q

Resistor-type memory preparation method, involves performing industrial reaction ion etching oxidization and remote plasma oxidization treatment to graphene layer to form graphene oxide layer, and forming upper electrode.

ZHOU P, ZHANG W, WU D, SUN Q