国家/地区 中国（5）
IPC部 H（5）
IPC大类 H01（5）
IPC小类 H01L（5）
IPC H01L031/18（2）
发明人 WU D（5）
公开年 2011（5）
申请年 2011（5） 
专利权人 UNIV FUDAN（3）

Gate oxide medium forming method for graphene FET in graphene apparatus, involves forming metal contact graphene layer, depositing atom layer to grow boron nitride as gate oxide medium, and arranging gate electrode on gate oxide medium.

SUN Q, WANG P, WU D, ZHANG W, ZHOU P

Graphene-cadmium selenide nanobelt heterojunction used for preparation of parallel component of solar battery, has graphene film and cadmium selenide nanobelt.

CAO A, FAN L, LI Z, WANG K, WU D, ZHANG L, ZHU H

Graphene/silicon schottky junction column array photovoltaic cell for solar battery, has metal front electrode deposited around window of silicon oxide isolation layer and graphene film or spin coating on silicon rod array.

FENG T, LI X, REN T, SONG R, TIAN H, WU D, XIE D, ZHU H

Method for preparing graphene FET, involves generating photoconduction effect in radiation of infrared ray by graphene channel layer.

ZHOU P, ZHANG W, WU D, SUN Q

Graphene FET for use in infrared detector for sky survey infrared detection application, has graphene channel layer generating photoconductive effect under infrared radiation and provided with multiple layers of graphite.

ZHOU P, ZHANG W, WU D, SUN Q