国家/地区 中国（10） 台湾（2） 美国（2）
IPC部 C（7） H（4） B（3）
IPC大类 H01（4） B01（2） C01（2）
C08（2） C22（2）
IPC小类 H01L（4） B01D（2） C01B（2）
C08K（2）
IPC B01D067/00（2） B01D071/34（2） C01B031/04（2）
C08K003/04（2） H01L021/336（2）
发明人 WU T（12）
公开年 2014（7） 2013（3） 2015（2）
申请年 2013（12）
专利权人 SHANGHAI INS.（5） UNIV TIANJIN.（2）

Composite thermoelectric material comprises solid-state thermoelectric material and graphene oxide.

CHEN L, CHEN X, LI X, WU T, ZONG P

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H

Preparing graphene oxide, by adding sodium nitrate into sulfuric acid, adding graphite into sodium nitrate solution in sulfuric acid, adding potassium permanganate into expanded graphite, and adding deionized water into graphite suspension.

TING J, WU T

Preparation of graphene crystal domain involves forming copper-nickel double sided substrate, introducing hydrogen, reacting, introducing carbon source, growing graphene crystal domain, introducing argon gas and cooling.

YANG C, WU T, LU G, ZHANG X

Aligned graphene sheets-polymer composite used as e.g. thermal interface materials comprises polymer matrix, and aligned graphene sheets including graphene filament bundles disposed in the matrix, and the bundles are parallel to each other.

WU T, LIN J, CHENG T, LEE S, TSAI M, YU J, TZENG S, LIN Y

Graphene-reinforced composite polyester fiber comprises graphene-free polyester, and graphene-containing polyester fiber obtained by adding polyester fiber into mixture of terephthalic acid and graphene ethylene glycol solution.

LIU L, LIU Z, ZHAO T, ZHENG Z, WU T, CHEN C

Graphene device manufacturing method, involves forming PMMA layer on PVA layer, where thicknesses of PVA layer and PMMA layer are in specific range, and graphene layer formed in PMMA layer.

WANG H, JIANG M, XIE X, WU T, SUN Q, XIE H

Manufacturing method of graphene field effect transistor, involves etching surface of carbon nanotransistor and connecting carbon nanotransistor to sub-electrodes to form graphene nanometer belt on semiconductor substrate.

SUN Q, XIE X, WU T, XIE H, WANG H

Oganic-inorganic composite ultra-filtration membrane, comprises polymer resin, silane functionalized graphene oxide polymer resin, N,N-dimethyl acetamide and polyethylene pyrrolidone, where polymer resin is polysulfone and polyurethane.

XU Z, LI B, LI Y, LV H, WU T, CHEN L, ZHANG J, ZHOU B

Tunneling FET unit, has first dielectric layer arranged in graphite layer, insulating barrier layer provided with second dielectric layer that is arranged in top gate electrode, where gate electrode is connected to graphene nanometer belt.

WANG H, XIE X, TANG S, WU T, XIE H, LIU X, SONG Y, SUN Q