国家/地区 中国（6）
IPC部 H（4） G（2）
IPC大类 H01（4） G01（2）
IPC小类 H01L（4） G01R（2）
IPC H01L029/78（3） H01L021/336（2）
发明人 XIAO K（6）
公开年 2013（6）
申请年 2012（6） 
专利权人 UNIV TSINGHU.（6）

Graphene photo detector, has two metal electrodes matched with each other, and graphene formed with metal contact layer pattern, where metal contact layer pattern is provided with two metal contact electrodes.

WU H, LV H, WU X, XIAO K, QIAN H

Graphite alkene quantum capacity testing device, has source electrode lead pattern and drain electrode lead pattern that are formed with ohmic contact layer pattern, where ohmic contact layer pattern is arranged on graphene layer.

WU X, QIAN H, WU H, LV H, XIAO K

Envelope detection filter, has metal wiring layer and interlayer medium layer arranged on transition layer, and channel layer i.e. graphene thin film, formed on grid electrode, source electrode and drain electrode of graphene transistor.

WU H, WU X, QIAN H, XIAO K, LV H

Graphene transistor for low-noise amplifier, has source and drain electrodes formed on gate electrode through metal contact layer, and graphene thin film formed on source electrode, drain electrode and grid electrode.

LV H, QIAN H, WU X, WU H, XIAO K

Inverted radio frequency power tube forming method, involves forming transition layer on substrate, connecting metallic contact layer with connection line, and forming graphene thin film as channel layer in radio frequency power tube.

QIAN H, WU X, LV H, WU H, XIAO K

Method for manufacturing two-dimensional material nanometer semiconductor device, involves forming source electrode, drain electrode, grid medium layer and grid electrode on graphene thin film.

XIAO K, WU H, LV H, QIAN H, WU X