国家/地区 中国（5） 世界知识产权组织（2）
IPC部 C（3） H（3）
IPC大类 C01（3） H01（3）
IPC小类 C01B（3） H01L（3）
IPC C01B031/04（2）
发明人 XIE J（5）
公开年 2013（3） 2019（2）
申请年 2012（2） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（5）

Selective graphene etching involves setting wavelength, power, and scanning path of laser, focusing through lens array, scanning area of substrate surface, completely etching away thin layer of graphene in area, and forming pattern.

GUAN Y, XIE J, QU F, LI N, ZHAO L, XIA Y

Processing graphene thin film material useful in field-effect transistor, optoelectronics and microprocessor field, comprises e.g. adjusting carrier sample stage to processing positioning point and performing selective scanning modification.

XIE J, QU F, XIA Y, LI N, ZHAO L, GUAN Y

Preparation of graphene wafer involves activating substrate, in which wafer is to-be-deposited, controlling thickness of graphene by ion-implantation process, contacting with surface of graphite, and applying external physical field.

XIA Y, LI C, XIE J, LUO W, ZHANG Y

Manufacture of graphene involves adding powdery graphite into mixed solvent, ultrasonically treating, centrifuging and removing supernatant.

XIE J, ZHANG Y, LI C, LUO W, XIA Y

Method for thinning multi-layer graphene used in e.g. nano sensor, involves adjusting process parameter such as pulse bias voltage and plasma injection time of inert gas of plasma immersion ion implantation device.

XIE J, XIA Y, LI C, LUO W