国家/地区 中国（12）
IPC部 C（8） H（4） B（3）
IPC大类 C01（5） C08（4） H01（3）
IPC小类 C01B（5） C08J（3） C08K（3）
C08L（3） H01L（2）
IPC C01B032/194（3） C01B032/19（2） C08J007/06（2）
C08L023/12（2）
发明人 XIE W（12）
公开年 2018（12）
申请年 2017（10）  2018（2） 
专利权人 SIXTH ELEMEN.（3） CHINESE ACAD.（2）

Realizing high temperature rubber conduction using vapor deposited graphene, comprises preparing vapor-deposited graphene surface film, coating, mixing, adding, dehydrating, drying and depositing.

ZHANG L, XIN W, XIE W, CHEN X

Device for preparing graphene particles comprises kettle, stirring device, powder spraying device, liquid atomizing device, stirring device, powder spraying device, and liquid atomization device are arranged on kettle body.

CHEN K, XIE W, LIU L, QU Y

Preparing surface micro-nano structure of polymer composite material comprises e.g. melt-blending polypropylene, graphene powder, lubricant and coupling agent, extruding and molding polymer composite material and demolding.

CHEN A, LI C, XIE W, HE X, DING S, ZHANG Z

Reaction device for fluorinating graphene, comprises water tank, where water storage tank is connected with microcomputer stripping chamber by guide pipe, draft tube of microcomputer stripping chamber is set to first throttle valve.

REN L, XIE M, LUO H, ZHANG Z, XU H, XIE W

Preparing graphene particles comprises mixing graphene powder with a polar solvent containing the binder uniformly, sieving the mixture and drying.

CHEN K, XIE W, LIU L, QU Y

Graphene containing electric adsorption refining filter element, has first fiber capturing medium layer for containing graphene nano material, and second fiber capturing medium layer for containing fiber capturing medium.

XU P, SHI B, XIE W

Narrow linewidth laser output method, involves automatically adjusting parameters of first pump laser, second pump laser, graphene Bragg grating and quartz disperser prism.

LI L, DUAN X, YANG Y, YANG X, BAI Y, XIE W, ZHOU L

Antimicrobial membrane for preventing microbial growth has support and composite containing graphene oxide compound and crosslinker in which composite coats the support, and crosslinker contains e.g. polyvinyl alcohol and/or biopolymer.

HSIEH W, KITAHARA I, ERICSON J, KOBUKE M, WANG P, ZHENG S, HSEIH W, XIE W, BEI Y, XIAO H

Method for preparing gallium nitride (GaN) epitaxial structure based on molybdenum disulfide-graphene composite buffer layer, involves growing gallium nitride layer on aluminum nitride layer using organic chemical vapor deposition process.

WANG W, LI M, LI Z, ZHANG J, YANG H, XIE W, DENG Z, DAI G

Preparation of gallium nitride epitaxial structure involves growing hexagonal boron nitride-graphene composite layer on copper substrate, and sequentially growing aluminum nitride layer and gallium nitride layer on composite layer.

WANG W, LI M, LI Z, ZHANG J, YANG H, XIE W, DENG Z, DAI G