国家/地区 中国（5） 美国（2） 世界知识产权组织（2）
IPC部 C（4） B（3） H（2）
IPC大类 C01（4） B82（3） C23（2）
H01（2）
IPC小类 C01B（4） B82Y（3） C23C（2）
IPC C01B031/04（4） B82Y040/00（3） C23C016/02（2）
发明人 XIE X（5）
公开年 2012（5）
申请年 2011（5）
专利权人 CHINESE ACAD.（2） SHANGHAI INS.（2） UNIV SOUTHEA.（2）

Graphene nano hole structure for carrier, has carrier table whose top surface comprises concentric circular holes, and copper mesh or silicon nitride layer formed on surface of carrier.

HE L, XU F, XU T, YIN K, SUN L, XIE X

Preparing graphene nanopore comprises providing graphene suspension on a carrier, placing the carrier in transmission electron microscope and converging at electron beam bombardment and protecting the pore by protective gas.

HE L, SUN L, XIE X, XU F, XU T, YIN K

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X

Method for gradually thinning graphene to obtain graphene nano structure, involves removing top layer of multilayer graphene by anisotropy oxidation process, annealing and processing multi-plasma treatment and high temperature annealing.

DING G, JIANG M, XIE X, YANG X

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X