国家/地区 美国（5）
IPC部 H（5） B（3） C（2）
IPC大类 H01（5） B82（3） C01（2）
IPC小类 H01L（5） B82Y（3） C01B（2）
IPC H01L023/532（5） B82Y030/00（3） C01B031/04（2）
H01L021/285（2） H01L021/768（2） H01L023/528（2）
发明人 YAMAZAKI Y（5）
公开年 2015（5）
申请年 2015（5） 
专利权人 TOSHIBA KK（5）

Method for manufacturing semiconductor device, involves depositing catalyst metal on side wall of contact hole of catalyst metal film by physical vapor deposition method, and growing graphene and carbon nanotubes from side wall of hole.

KATAGIRI M, YAMAZAKI Y, SAKAI T, SAKUMA N, SUZUKI M

Semiconductor device, has metal layer provided above substrate with semiconductor element, and graphene layer including cross-sectional surface and extending in longitudinal direction, where metal layer includes convex shape on surface.

WADA M, YAMAZAKI Y, KAJITA A, ISOBAYASHI A, SAITO T

Wiring comprises a graphene having 5-7 membered ring-dense regions useful for improving the electrical conductance.

YAMAZAKI Y, YOSHIDA T, NISHIDA Y, MIYAZAKI H, ALGA F, SAKAI T, AIGA F

Semiconductor device for large scale integrated circuit (LSI), has graphene wires that are provided within each catalyst film formed in trenches of wire layer.

YAMAZAKI Y, WADA M, KITAMURA M, SAKAI T

Semiconductor device e.g. photoelectric conversion device, has conductive film for containing particle as junction and graphene extending in network from junction, where graphene in conductive film is separated from insulation film by gap.

YAMAZAKI Y, WADA M, SAITO T, SAKAI T