国家/地区 中国（6）
IPC部 H（3） C（2）
IPC大类 C01（2） H01（2） H03（2）
IPC小类 C01B（2） H01L（2）
IPC C01B031/04（2） H01L029/06（2）
发明人 YE T（6）
公开年 2012（4） 2013（2）
申请年 2012（6）
专利权人 UNIV PEKING（4） INST MICROEL.（2）

Analog-to-digital converter, has multi-path distributor provided with multiple graphene channels and gate contact, where included angle is formed between each graphene channel and gate contact.

JIN Z, LIU X, YE T, CHEN D, LIANG Q, ZHU H, ZHONG H

Graphene device for use as multi-channel selective device, e.g., multiplexer or demultiplexer, has graphene channels which are in contact and electrically connected with gate, in which graphene channels and gate have different angles.

JIN Z, LIANG Q, LIU X, YE T, ZHONG H, ZHU H, CHEN D

Graphene-emitting diode structure for diode logic gate, has rectangle portions that are connected with graphene nanostructures, and graphene nanostructure that is composed of negative type and positive type doping graphene nanostructure.

FU Y, HUANG R, REN L, ZHAO H, WEI Z, ZHANG X, YE T

Preparing graphene nanometer belt for making integrated circuit, involves preparing graphene on substrate, using metal nano-particles, etching along graphene preferred direction in annealing process, in boundary domain function of graphene.

FU Y, HUANG R, WEI Z, ZHANG X, YE T, ZHOU M

Etching of multi-layered graphene involves forming multi-layered graphene on substrate, forming bands with specific height on substrate, annealing substrate by supplying argon/hydrogen, and then naturally cooling substrate.

FU Y, HU B, HUANG R, WEI Z, ZHANG X, YE T

Preparation of atom scale graphene groove, e.g. for nano-electronics field, by suspending graphene on high temperature resistant substrate, depositing metal atoms on surface, etching in argon/hydrogen atmosphere, cooling, and vacuum-drying.

FU Y, HUANG R, LI C, WEI Z, ZHANG X, YE T