国家/地区 中国（16） 韩国（2） 美国（2）
IPC部 C（7） H（7） B（4）
IPC大类 H01（6） B01（4） C02（3）
C01（2）
IPC小类 B01J（3） C02F（3） H01L（3）
C01B（2） H01G（2）
IPC B01J027/06（2） C01B032/19（2） C02F001/30（2）
C02F101/30（2） H01G004/008（2） H01G004/012（2）
H01G004/12（2） H01G004/232（2） H01G004/248（2）
H01G004/30（2） H01L021/02（2）
发明人 YU X（16）
公开年 2019（16）
申请年 2019（13）  2018（3） 
专利权人 SAMSUNG ELEC.（2） UNIV JINAN G.（2） UNIV ZHEJIAN.（2） WUHAN CAS AD.（2）

Preparing conductive polymer/graphene oxide composite material involves dissolving ferric chloride in graphene oxide aqueous solution and dispersing ultrasonically to obtain mixed ferric chloride/graphene oxide aqueous solution.

YU X, WANG H, HE M, LI L, XIONG L

High temperature resistant graphene far infrared electric heating film, has cushion block whose middle part is formed with screw hole, and metal current-carrying sheet covered with layer of high temperature resistant polyethylene terephthalate insulating covering.

YU X

Electroconductive powder for use in capacitor components for imaging devices, such as liquid crystal displays, comprises metal particles, and graphene oxide disposed on portion of surface of metal particles.

HEE K, WOO S K, YOU W H, CHO J H, KIM J H, YOO W H, JO J H, JIN Z, YU X, LIU Y, ZHAO Z

Multi-Layered ceramic capacitor component for use in imaging devices, has cover part formed on and under capacitance forming part, and margin part formed on two sides of forming part, where cover part and margin part are made of graphene.

CHOI D W, CHO J H, WOO S K, CHUNGHAESUK, JO J H, CHUNG H S, CUI D, ZHAO Z, YU X, DING H

Preparation of graphene oxide conductive glass comprises loading glass surface with graphene, and forming two adjacent layers of graphene oxide using divalent manganese ions.

CHENG N, ZHAO J, ZHANG L, ZHUANG Z, YU X

Processing of silicon chip surface for graphene growth, involves immersing clean silicon wafer in hydrofluoric acid solution, washing with water, drying, immersing in phenol derivative solution, rinsing, and drying.

YU X, HUANG K, CONG J, YANG D

Method for growing graphene on silicon substrate, involves placing clean silicon substrate in reaction chamber for plasma enhanced atomic layer deposition cycle by performing carbon source or auxiliary source adsorption.

YU X, CONG J, HUANG K, YANG D

Preparing low self-discharge lithium battery cathode material comprises e.g. taking graphene, conductive carbon black, lithium iron phosphate and nano-silica powder, mixing, extruding, grinding, calcining and pressing.

YU X

Preparing graphene/iridium oxyhydroxide/graphene sandwich structure photocatalyst involves diluting aqueous graphene oxide solution with absolute ethanol, then adding nafion solution, forming uniform solution by ultrasonication.

ZHANG Y, HUANG J, ZHU Y, CHEN W, YU X, FU X

Crystal diamond flash laser anti-counterfeit packing material comprises e.g. graphene antistatic layer, base paper layer, zinc sulfide highlight layer, holographic laser anti-counterfeiting layer and non-solvent composite adhesive layer.

CHEN Y, YU X, ZHU L