国家/地区 中国（7）
IPC部 C（4） G（2）
IPC大类 C30（3） C01（2） G01（2）
IPC小类 C30B（3） C01B（2） G01N（2）
IPC C01B031/04（2） C30B029/02（2）
发明人 ZHANG H（7）
公开年 2015（7）
申请年 2014（4）  2015（3） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（7）

Flexible metal substrate device for growing graphene thin film, has reflective plate that is located on outer peripheral side of heater for reflecting heat chamber in inward direction.

CHEN Z, HU B, WU H, WU K, XU W, ZHANG H, ZHANG Y, XI M, YU G

Method for representing graphene, involves forming graphene on substrate, and followed by judging damage condition of graphene surface according to corrosion degree of lower part of graphene substrate.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Preparing graphene single crystal involves preparing cuprous oxide film on the surface of the substrate to obtain graphene single crystal having low nucleation density.

CHEN Z, SUI Y, ZHANG H, ZHANG Y, YU G

Method for increasing ohm contacting of metal electrode and graphene, involves performing metal ion solution soaking process, and forming surface of metal electrode with insulation substrate using electron beam.

CHEN Z, GE X, XU W, SUI Y, ZHANG H, ZHANG Y, YU G

Improving cleanliness of graphene surface involves completely transferring organic adhesive, and combination of graphene and target substrate into solvent contained in plastic sealed container, and heating container to obtain graphene.

CHEN Z, GE X, XU W, SUI Y, ZHANG H, ZHANG Y, YU G

Method for determining use of chemical vapor deposition grown graphene crystal orientation of polycrystalline copper substrate surface, has determining use of graphene crystal orientation of copper substrate surface.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G