国家/地区 中国（5）
IPC部 H（5）
IPC大类 H01（5）
IPC小类 H01L（5）
IPC H01L021/02（2） H01L021/768（2） H01L029/06（2）
H01L029/16（2）
发明人 ZHAO C（5）
公开年 2016（2）
申请年 2015（2） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（5）

Method for growing graphene that is utilized in semiconductor device, involves providing single crystal of silicon or germanium substrate, and growing graphene layers on epitaxial layer by chemical vapor deposition.

LUO J, ADAMSON H H, WANG L, ZHAO C, WANG G

Growing graphene involves forming single crystal metal silicide layer on substrate, and growing graphene layer on metal silicide layer using chemical vapor deposition method.

LUO J, ZHAO C

Graphene strip structure manufacturing method, involves forming groove on first medium layer substrate, forming catalyst layer on first medium layer substrate, and forming catalyst layer on groove.

SU Y, ZHU H, ZHAO C, GU K

Interconnection structure, has lower-layer wiring structure formed on substrate, and shielding layer formed on lower-layer wiring structure and arranged with graphene part and upper-layer wiring structure.

SU Y, YANG J, ZHU H, NIE P, ZHAO C, GU K

Graphene device manufacturing method, involves obtaining substrate, forming negative type or positive type graphene layer on substrate, forming grid regionon graphene layer, and forming inter-layer on graphene layer.

CHEN D, WANG W, ZHAO C