国家/地区 中国（7）
IPC部 H（5） B（2） C（2）
IPC大类 H01（5） B82（2） C01（2）
IPC小类 H01L（4） B82Y（2） C01B（2）
IPC C01B031/04（2）
发明人 ZHAO H（7）
公开年 2012（6）
申请年 2012（7）
专利权人 UNIV PEKING（4） UNIV SHANGHA.（2）

Use of gamma ray for producing graphene/nickel nanocomposite material involves dispersing graphite oxide and nickel salt in de-ionized water to obtain mixed solution, adding isopropyl alcohol, and carrying out reaction using gamma ray.

XU P, ZHAO H, ZHANG L, LI Z

Nanophase sulfur/graphene oxide composite electrode material preparation method, involves washing mixture with ethanol, and drying mixture to obtain nanometer sulfur/graphene oxide composite material.

PAN L, SHI L, XU J, ZHAO H, XING S

Graphene-emitting diode structure for diode logic gate, has rectangle portions that are connected with graphene nanostructures, and graphene nanostructure that is composed of negative type and positive type doping graphene nanostructure.

FU Y, HUANG R, REN L, ZHAO H, WEI Z, ZHANG X, YE T

Large scale preparation of high conductivity graphene for electrode material of lithium ion battery, comprises subjecting graphite sheet to chemical oxidation, processing in oven, adding hydroiodic acid, stirring, centrifuging and drying.

DONG X, PAN L, XU J, ZHAO H, XING S

Silicon dioxide pattern processing method involves transferring image of graphene to silicon dioxide substrate after etching silicon dioxide film by etching solution.

FU Y, HUANG R, LI P, REN L, ZHAO H, WEI Z, ZHANG X

Graphene FET for flexible display device, has graphite alkene material with source and drain electrode that is provided with wrapping medium layer on graphene material through zinc oxide nano-meter wire.

FU Y, HUANG R, WEI Q, WEI Z, YIN J, ZHANG X, ZHAO H

Integrated circuit metal interconnection structure, has upper layer metal interconnection connected with metal through hole, and single layer or multi-layer graphene arranged on surface of upper layer metal interconnection.

CAO Y, CUI X, FU Y, HUANG R, WEI Q, WEI Z, YIN J, ZHANG X, ZHAO H