国家/地区 中国（8）
IPC部 C（7） B（2）
IPC大类 C01（3） C23（2）
IPC小类 C01B（3） C23C（2）
IPC C01B031/04（2）
发明人 ZHENG X（8）
公开年 2014（8）
申请年 2013（4）  2014（4） 
专利权人 SHANGHAI INS.（2）

Preparation of single-crystal graphene domain involves performing chemical vapor deposition on specific-plane of semiconductor material as catalytic substrate using gaseous or solid carbon.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z

Heat-dissipating sheet used for electronic device, consists of metal layer, graphene layer, protective layer, adhesive layer, and release layer in contact with surface of adhesive layer, and has preset thermal conductivity.

LEE M, JEONG H, LEE M H, ZHENG X

Graphene material composite glass used in laser protection field, comprises block-shaped material of graphene material of zero-dimensional graphene quantum dots, and gel glass substrate which is organic silane-modified silicate glass.

FENG M, ZHAN H, ZHENG X

Substrate for matrix-assisted laser desorption-ionization time-of-flight mass spectrometry, is made of graphene oxide-grafted 4-vinyl-boronic acid obtained by dispersing copper bromide in 1,4-dioxane, washing and vacuum-drying.

NI Y, ZHANG J, ZHENG X

Reduction of graphene oxide by dissolving cardanol or urushiol in solvent, ultrasonically dispersing graphene oxide in solution, stirring, filtering, and washing.

CHEN T, MENG X, WENG J, RUAN H, ZHENG X

Preparation of graphene by dispersing graphene in sulfuric acid, adding potassium permanganate and sodium nitrate, heating, adding distilled water, deionized water, and hydrogen peroxide, heating, dispersing, and adding organic solvent.

HE Y, YAO D, ZHANG H, ZHANG Y, ZHENG X

Preparing graphene doped calcium silicate coating useful for hard tissue substitute material comprises wet ball milling calcium silicate and graphene to obtain suspension, drying to obtain powder, and spraying on base material surface.

HUANG L, LI H, XIE Y, ZHENG X

Preparation of graphene involves injecting germanium ion to silicon carbide substrate, annealing obtained structure, breaking silicon carbide substrate to silicon and carbon, combining silicon and germanium, and recombining carbon.

DI Z, CHEN D, DING G, WANG G, XIE X, ZHANG M, YE L, ZHENG X, LU Z