国家/地区 中国（7）
IPC部 C（4） H（4）
IPC大类 C01（4） H01（4）
IPC小类 C01B（4） H01L（3）
IPC C01B031/04（4）
发明人 ZHOU P（7）
公开年 2014（5） 2013（2）
申请年 2013（7）
专利权人 UNIV FUDAN（3） DONGGUAN XIA.（2）

Hydrogen-reduction preparation of graphene, involves preparing graphene oxide using natural crystalline flaky graphite, sodium nitrate, sulfuric acid, potassium permanganate, and hydrogen peroxide, and reducing with hydrogen.

HUANG D, ZHOU P, CHEN P

Preparation of graphene/titanium dioxide composite material used for lithium ion battery cathode material, involves preparing graphite oxide nanosheet, washing with deionized water, soaking, filtering and vacuum drying.

DAI T, ZHOU P, ZHAO D

Channel width controlled large area graphene nanometer belt Fin-FET device, has transfer graphene-containing layer formed on source/drain electrode of substrate, where part of graphene-containing layer is located on medium layer of gate.

SUN Q, WANG P, ZHOU P, ZHANG W, DAI Y

Graphene oxide-based flexible charge trap memory has charge trap layer which is made of graphene oxide and is provided on upper surface of charge tunneling layer.

WANG P, ZHOU P, ZHANG W, SUN Q, WANG L

Graphene belt based spin valve contains edged carbon atoms as graphene nanometer belt spin transport channel, and is prepared by cleaning doped silicon substrate and applying silicon dioxide layer on silicon substrate.

WANG P, ZHOU P, ZHANG W, SUN Q, WANG L

Preparing graphene involves preparing graphene oxide water solution; mixing thiourea, soluble strong base and de-ionized water to obtain reducing agent solution; and mixing reducing agent solution and graphene oxide water solution.

ZHOU P, HUANG D, DAN W

Manufacture of graphene involves forming primary filter cake by reacting specified amount of benzene and anhydrous aluminum chloride, forming secondary filter cake and tertiary filter cake, and drying deionized tertiary filter cake.

DAI T, ZHOU P, ZHAO D