国家/地区 中国（15）
IPC部 C（7） B（6） H（6）
G（2）
IPC大类 H01（6） B01（3） B82（3）
C01（3） C07（2） C09（2）
G01（2）
IPC小类 H01L（5） B01J（3） B82Y（3）
C01B（2） C07C（2） G01N（2）
IPC H01L021/336（4） B01J023/46（2） B82Y030/00（2）
C01B031/04（2） G01N027/04（2） H01L029/78（2）
发明人 ZHU H（15）
公开年 2014（15）
申请年 2014（9）  2013（6） 
专利权人 INST MICROEL.（4） UNIV ANHUI T.（2） UNIV PEKING（2）

Double-layer graphene tunneling FET, has double-layer graphene active area, metal source electrode and drain electrode metal, which are made of different materials, and top gate electrode located in top gate medium layer.

HUANG R, WANG J, WU C, ZHAO Y, HUANG Q, ZHU H

Gas-sensitive material for detecting low concentration of formaldehyde, comprises tin oxide-doped indium oxide and graphene complex material.

BAI L, CHU X, YU X, ZHU H, HU R

Graphene FET, has double-layer graphene active area provided with top gate electrode that is connected with metal source electrode to cover source area, and metal drain electrode provided with drain region.

HUANG Q, HUANG R, WANG J, WU C, ZHAO Y, ZHU H

Composite nanophase absorbing material obtained by uniformly loading cobalt and graphene on a thin surface, and drilling to form nano-granule.

LIN S, WANG F, YU J, ZHU H

Modified graphene preparation method used for preparing aqueous antistatic epoxy floor coatings, comprises mixing graphene and straight-chain hydroxyl and epoxy base compound, adding quaternary ammonium salt, and reacting.

TANG Y, JIANG C, ZHU H, MENG L, CAI Z

Low concentration acetaldehyde gas sensitive material, comprises graphene composite material including SnO2 and Sb2O3, where material is made of side type gas-sensitive sensor.

YU X, ZHU H, BAI L, CHU X, HU R

Synthesizing polyoxymethylene dimethyl ether comprises reacting methanol and trioxymethylene using graphene oxide as a catalyst under normal atmospheric pressure.

CHEN C, CHEN G, FAN W, QIN Z, WAN G, WANG J, WU Z, WU J, ZHU H, WANG R

Graphene-loaded metal nanocomposite material used for oxidation reaction of benzyl group, comprises specified amount of metal nanoparticles having specified range of particle diameter, uniformly dispersed in graphene.

FENG L, LIU R, ZHU H, HE G, SONG G, JI J, YU X

Non-standard electrostatic force switch, has substrate fixed with graphene along arrangement direction, and support electrode connected with source and drain electrodes that are electrically connected together.

SU Y, YANG J, ZHU H, NIE P, GU K

Semiconductor device manufacturing method, involves forming graphene layer with substrate layer, where medium layer is formed with upper end of graphene layer and bump structure, and forming mask side wall with etching layer.

ZHU H, GU K