国家/地区 韩国（5） 美国（2）
IPC部 B（5）
IPC大类 B01（5） C01（5） C23（2）
H01（2）
IPC小类 B01J（5）
IPC B01J019/08（5）
发明人 PARK C H（2） WON D K（2）
公开年 2012（2） 2015（2）
申请年 2014（2） 
专利权人 HANWHA TECHWIN CO LTD（5）

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Transferring graphene, comprises e.g. synthesizing graphene layer on catalytic metal film, laminating flexible transfer film on graphene to obtain first laminated structure, and removing catalyst metal film from first laminated structure.

PARK J S

Synthesis apparatus of graphene sheet used in e.g. solar cell, has first sensor unit for measuring current which varies in fixed interval, after separating carrier film from graphene thin film and after applying high frequency voltage.

PARK C H, YOON J H

Graphene manufacturing device has heating portion anneals processed substrate in which amorphous carbon is deposited.

GWAN W D, YEONG K N, WON D K, KIM N Y

Graphene synthesis chamber for synthesizing graphene comprises chamber case in which substrate comprising metal thin film, gas supply unit, main heating unit which emits light to inner space to heat substrate; and auxiliary heating unit.

WON D, NAM W, WON D K, NAM W S