国家/地区 美国（6）
IPC部 B（6）
IPC大类 B01（6）
IPC小类 B01J（6）
IPC B01J019/12（6）
发明人
公开年 2012（3） 2013（2）
申请年 2011（2）  2012（2）  2013（2） 
专利权人 CALIFORNIA I.（2）

Restoring properties including charge neutrality point, doping state, carriers and conductivity of graphene used for silicon treatment of graphene, comprises grounding graphene, and exposing graphene to plasma having specified density.

CHOI J, YOO W, LEE S, LIM Y, CHOI J Y, LEE S H, LIM Y D, YOO W J

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Making graphene film comprises providing copper foil, placing foil in microwave plasma chemical vapor deposition chamber, evacuating chamber, providing hydrogen gas to chamber, exposing foil to plasma, and providing methane gas to chamber.

FISHER T S, KUMAR A

Making doped single graphene sheets involves oxidizing graphite to non-electrically conductive graphite oxide followed by exfoliating in solvent, depositing metal or metal oxides, and reducing to electrically conductive graphene sheets.

DO I, DRZAL L T, MONGA A

Fabricating graphene oxide material involves providing substrate; depositing graphene layer onto substrate; and oxidizing portion of graphene layer, with dry oxidation technique for period of time sufficient to obtain band gap.

GHARIB M, ARIA A I, GANI A W

Forming graphene, comprises providing substrate and carbon-containing reactant source in chamber, and radiating laser beam on substrate to decompose carbon-containing reactant source and form graphene over substrate.

LEE K, CHOI I, CHOI S, HONG B, LEE K J, CHOI I S, CHOI S Y, HONG B H