国家/地区 美国（9） 韩国（8） 世界知识产权组织（6） 中国（4） 欧洲专利局（EPO）（4） 日本（4） 新加坡（2）
IPC部 B（11） C（10） H（7）
IPC大类 B82（11） C01（9） H01（7）
B01（3） B32（3） C09（3）
C23（3） C08（2）
IPC小类 B82B（11） C01B（9） B82Y（8）
H01L（6） B01J（3） B32B（3）
C23C（3） C08G（2） C09D（2）
H01B（2）
IPC B82B003/00（11）
发明人
公开年 2012（11）
申请年 2012（11）
专利权人

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Semiconductor sealing material composition used as packaging material to protect electronic part e.g. diode comprises epoxy resin; hardener; curing catalyst; additive such as coupling agent; and nano-graphene plate powder as filler.

CHOI S, PARK S, CHOI S H, PARK S H, HONG C S, HUI P S

Fabricating graphene-controlled nano-graphite, used as basic material for e.g. lithium-ion battery electrode, comprises preparing graphene powders and fabricating graphene-controlled nano-graphite through heat treatment of graphene powders.

LEE J K

Making graphene nanoribbon comprises contacting poly(phenylene ethynylene) polymer, annulating compound, and catalyst system comprising metal catalyst and protic acid, and oxidizing the arylannulated polymer product.

DICHTEL W R, ARSLAN H, URIBEROMO F J

Preparing a multilayer film comprising metal nanoparticles and a graphene-based material using electrophoretic deposition on a substrate, comprises electrophoretically depositing a layer of graphene-based material on the substrate.

CHEN X, NIU Z, BOEY Y C F, MA J

Method for manufacturing FET e.g. self-aligned graphene FET for graphene device, involves inhibiting deposition of metal layer over specific portion of thin film proximate foot region by head region of gate electrode.

ZHOU C, BADMAEV A, WANG C, CHE Y

Graphene heterostructure used for electronic components used in electronic circuits, and for electronic devices, consists of graphene layer positioned between two encapsulation layers.

GEIM A K, NOVOSOLEV K S, GORBACHEV R V, PONOMARENKO L A, GEIM A, NOVOSELOV K, GORBACHEV R, PONOMARENKO L, NOVOSELOV K S

Synthesizing graphene comprises refluxing reaction mixture of solvent e.g. water and carbonaceous material promoting polycyclic aromatic hydrocarbon formation, collecting and directing obtained vapors to substrate and recovering graphene.

SHANKMAN R S, HANKMAN R S

Graphene synthesis chamber for synthesizing graphene comprises chamber case in which substrate comprising metal thin film, gas supply unit, main heating unit which emits light to inner space to heat substrate; and auxiliary heating unit.

WON D, NAM W, WON D K, NAM W S

Surface modification of graphene oxide for e.g. sensor lamp, involves forming graphene oxide-polymer nanocomposite by dispersing catalyst mix containing monomer and catalyst in slurry containing graphene oxide dispersed in organic solvent.

YOON K R, PARK M S