国家/地区 中国（37）
IPC部 B（37）
IPC大类 B82（37） C01（37） H01（22）
C23（12） B32（11） B05（9）
C08（9） C07（7） B01（6）
C09（6） C30（5） B44（3）
C03（3） B21（2） B22（2）
IPC小类 B82Y（37）
IPC B82Y030/00（37）
发明人 VEERASAMY V（4） VEERASAMY V S（4） CHUNG H（3）
CHUNG H J（3） HEO J（3） HEO J S（3）
KIM J（3） SEO S（3） SEO S A（3）
WOO Y（3） WOO Y S（3） BAE S（2）
BAE S K（2） HUH J（2） HUH J S（2）
公开年 2011（37）
申请年 2011（16）  2010（14）  2009（7） 
专利权人 GUARDIAN GLA.（4） GUARDIAN IND（4） GUARDIAN IND.（4） SAMSUNG ELEC.（3）
BAYER TECHNO.（2） SUH K S（2） UNIV DONGHUA（2） UNIV MANCHES.（2）
UNIV RICE WI.（2） UNIV SINGAPO.（2） UNIV SINGAPO.（2） UNIV SUNGKYU.（2）
UNIV SUNGKYU.（2） UNIV SUNGKYU.（2） VEERASAMY V .（2）

Forming graphene used in e.g. bioanalytics involves providing graphite sample having atomic layers of carbon; introducing solvent and ions into spaces between the atomic layers; expanding space; and separating the layers using driving force.

LOH K P, WANG J, JUNZHONG B, LOH K, LUO J, ZUNZHONG W

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S

New functionalized graphene compound comprising graphene and fluorine having specific fluorine to carbon ratio used as structural material, electronic component, optical component, magnetic component or coating.

GEIM A, RAVEENDRANNAIR R, NOVOSELOV K, RAEBINDEURAN N R, RAVEENDRAN N R

Method for preparing nano composite material of graphene and manganese dioxide for use as e.g. catalyst, involves washing product to prepare graphene that is dispersed in potassium permanganate solution, and adding and reacting acid.

CAI Y, GUO N, QIN Z, WANG L

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O

Film, useful in semiconductor devices for displays devices and field effect transistors, comprises a base layer having amino groups, and a reduced graphene oxide layer formed on the base layer.

KOBAYASHI T, TOSHIYUKI K

Preparation of graphene-type conductive material involves applying oxide graphene sol and metal salt solution and/or metal colloidal solution on substrate layer, separating, forming solid film and treating at specified condition.

LIANG M, ZHI L

Article e.g. photodetector, comprises graphene layer having work function and metal oxide film having work function greater than work function of graphene layer, formed on graphene layer.

CHEN W, CHEN Z, WEE T S A, XIE L, WANG X, SUN J, ARIANDO, HWANG J, CHEN V, CHEN ZH, WEE T SH A, SUN Y

Manufacture of cobalt/graphene composite material involves dispersing graphite oxide in glycol solution, adding cobalt salt, anhydrous sodium acetate and polyethylene glycol, heating, cooling, centrifuging, washing and drying.

LI Y, WANG H, ZHANG F, ZHANG Q

Producing two-dimensional nano-materials, useful in sensors, comprises adding sol precursor compound to mixture of graphene oxide particles or graphene particles and surfactant, reacting mixture in sol-gel process, and optionally heating.

IVANOVICI S, YANG S, FENG X, MUELLEN K, BIN Y S, KLAUS M