国家/地区 美国（8） 世界知识产权组织（7） 中国（6） 欧洲专利局（EPO）（4） 韩国（4） 日本（3） 台湾（3）
IPC部 C（11） B（4） H（4）
IPC大类 C01（11） H01（4） B82（3）
C08（2）
IPC小类 C01B（11）
IPC C01B031/00（11）
发明人
公开年 2014（11）
申请年 2014（11）
专利权人 SEKISUI CHEM.（2） SEKISUI CHEM.（2）

Manufacturing reduced graphene oxide, comprises obtaining reduced graphene oxide laminate by reducing prepared dispersion liquid, dispersing reduced graphene oxide laminate in an aqueous solvent to obtain multilayered reduced graphene oxide.

LEE H

Manufacture of flaky graphite used for forming flaky graphite-resin composite, involves immersing carbon material having graphene laminated structure in liquid, irradiating electromagnetic waves, heating and slicing carbon material.

INUI N

Composition, useful in an electrochemical capacitor, comprises a combination of a high surface area nanosized graphite comprising nanosized graphene nanotubes and nanosized graphene nanoplatelets, and carbon.

DO I, KIM H, DO IN H

Hybrid nanomaterial useful in antimicrobial composition that is used e.g. to treat or prevent bacterial or fungal infection, comprises graphene oxide nanomaterial covalently conjugated to cationic quaternized chitosan.

CHAN B E M, LI P, CHEN M

Preparation of graphene-based film used for device, involves forming layered structure by providing graphene-based film comprising sheets of graphene, graphene oxide and partially reduced graphene oxide.

LI D, YANG X

Producing random structure graphite intercalation compounds (GIC) by preparing alkali metal-GIC having alkali metal intercalated between graphene layers, and making polar protic solvent to contact with alkali-metal GIC.

WADA T, NAKASUGA A, TOYODA M, TAKUYA W

Producing a metal/graphene nanocomposite material involves directly growing graphene on metal or alloy particles using chemical vapor deposition technology in combination with powder metallurgy, and producing nanocomposite.

BUI H T, DOAN D P, LE DINH Q, NGUYEN V C, PHAM V T, PHAN H K, PHAN N H, PHAN N M

Forming a graphene film on a silicon carbide material involves heating the silicon carbide material to a growth temperature, and exposing the silicon carbide material to a growth atmosphere comprising a halogen species.

SUDARSHAN T S, CHANDRASHEKHAR M S, RANA T

Method for forming graphite-based structure used for e.g. electronic devices, involves patterning substrate, forming elements on substrate, depositing graphene initiating layer on top surface of each element, and generating graphene.

DAVIS M A

Preparation of hydrogenated graphene comprises taking sodium-potassium alloy and anhydrous liquid amine, mixing in inert atmosphere, adding graphite fluoride dispersion, mixing to react, adding fatty alcohol, and quenching reaction.

HUANG X, YANG Y, ZHANG S