国家/地区 |
中国(11)![]() |
IPC部 |
C(11)![]() |
IPC大类 |
C01(11)
H01(11)
B82(9)
B01(3) B32(2) |
IPC小类 |
C01B(11)![]() |
IPC |
C01B031/00(11)![]() |
发明人 | HIROHASHI T(2) |
公开年 |
2012(11)![]() |
申请年 | 2012(7) 2011(4) |
专利权人 | SEMICONDUCTO.(2) |
CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T
HIROHASHI T, OGUNI T, KOKUNI T
KANG F, LI B, LV W, TAO Y, YANG Q, YOU C, ZHANG C, HONG F, YAO Y
CAO Y, DU K, HU G, PENG Z, WU K, DU KE
DELGADO SANCHEZ J M, SANCHEZCORTEZON E, ATIENZAR CORVILLO P, PRIMO ARNAU A M, GARCIA GOMEZ H, DELGADO S J M, SANCHEZ C E, ATIENZAR C P, PRIMO A A M, GARCIA G H, SANCHEZ CORTEZON E, SANCHEZ J M D, CORTEZON E S, CORVILLO P A, ARNAU A M P, GOMEZ H G
SUN P, WU Z, LIU G, TAMAKI E, KUBOTA Y, WU G, KAI W, GANG U
THALAPPIL P, MALIYEKKAL S M, SREENIVASAN S T, MUNDAMPRA M S, THERUVAKKATTIL S, PRADEEP T, SREENIVASAN S H