国家/地区 日本（7）
IPC部 B（7）
IPC大类 B32（7） C01（7） H01（5）
B82（2） C23（2）
IPC小类 B32B（7）
IPC C01B031/02（7）
发明人
公开年 2015（5）
申请年 2014（7）
专利权人

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H

Functional film used for inner wall of pipeline for petroleum transport, and outer wall of boats and ships and aircraft, comprises aggregated graphene nano ribbons.

NOMOTO H, FUKAYA S

Manufacture of graphene film used for e.g. next-generation transistor, involves transferring graphene film with supporting film to graphene film on another substrate, and transferring laminated graphene films to another substrate.

HAYASHI K

Apparatus for producing blackbody spectrum, has thermal spreading layer which includes graphene sheet that is configured to reduce spatial variation of heat in plane of thermal spreading layer.

CHOW J R, KETOLA K S, LA KOMSKI D M, TOWNSEND C W, ELIAS W E, MARBLE S J, LAKOMSKI D M

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Composition, used in a phase change material which is useful e.g. as thermal conductivity substrate for flexible graphene electronic devices, as electrode in battery, and in a thermal storage device, comprises galactitol and mannitol.

DA SILVA A K, FLEMING E, SHI L, BIELAWSKI C W, RUOFF R S, WEN S, JI H, PETTES M, PAUL A, PAEK E, PAK A J, SELLAN D P, FLAMING E, DA SILVAA A K

Laminate used for field effect transistor, has mica, self-assembled film formed on mica, and graphene film formed on self-assembled film in which each of molecules has hydrophobic principal chain.

FUJII TAKESHI, SATO MARIKO, FUJII T, SATO M