国家/地区 日本（32）
IPC部 C（32）
IPC大类 C01（32） H01（25） B82（20）
B32（9） B05（7） C08（6）
C23（5） C30（5） B01（4）
C09（4） C25（3） B29（2）
B44（2） C03（2） D01（2）
IPC小类 C01B（32）
IPC C01B031/02（32）
发明人 FUJII K（3） VEERASAMY V（3） VEERASAMY V S（3）
KAWASHIMA Y（2） KAWASHIMA YASUSHI（2） LOLLI G（2）
MLECZKO L（2） OOTA N（2） SCHLUETER O F（2）
SCHLUETER O F K（2） SCHLUTER O F（2） SHIMIZU A（2）
WOLF A（2）
公开年 2011（16） 2010（11） 2009（5）
申请年 2009（32）
专利权人 FUJI ELECTRI.（3） FUJI ELECTRI.（3） GUARDIAN GLA.（3） GUARDIAN IND（3）
GUARDIAN IND.（3） BAYER TECHNO.（2） HITACHI MAXE.（2） KAWASHIMA Y（2）
KAWASHIMA YA.（2）

Manufacture of electrode used for e.g. capacitor, involves applying external magnetic field to magnetic material containing nitrogen and/or sulfur, magnetic graphene and magnetic graphite and controlling arrangement direction of molecules.

OOTA N

Normal-temperature superconductor used for manufacturing ferromagnetic material for electromagnetic coil, comprises substance containing graphene, and proton donor.

KAWASHIMA YASUSHI, KAWASHIMA Y

Graphene oxide sheet used for graphene-containing material, is obtained by dispersing graphene-containing carbon substance using dispersing agent to reduce size of aggregation unit of carbon substance, and oxidizing resulting product.

FUGETSU B

Air electrode for use in air battery, has graphene layers that are oriented in given direction, and basal plane of carbon material that is appeared upon surface of carbon material.

MIZUNO F, NISHIKORI H, HIGASHI S

Manufacture of graphene thin film as transparent conductive film for solar cell, involves coating dispersion liquid containing oxidized graphene powder on substrate, contacting metal with formed oxidized graphene thin film, and heating.

FUJII K, SHIMIZU A

Solid acid e.g. used for proton conducting membrane contains oxidation graphite and/or oxidation graphene with specified thickness.

KAWAHARA Y, FUJII K

Producing a graphene-solution, useful for producing a composite material, which is useful in batteries, capacitors, paints, coatings and catalysts, comprises reducing graphite with an alkali metal salt in a polar organic solvent.

WOLF A, LOLLI G, MLECZKO L, SCHLUETER O F, SCHLUETER O F K, SCHLUETER O, SCHLUTER O F

Manufacturing structure comprising semiconductor substrate and modified graphene layer, comprises supplying initial structure comprising standard graphene layer, and hydrogenating initial structure with exposure dosage of hydrogen gas.

CHIANG S, ENRIQUEZ H, OUGHADDOU H, SOUKIASSIAN P, TEJEDA G A, VIZZINI S, TEJEDA GALA A, GALA A T

Composite material, useful for producing graphene layers material, comprises a layered double hydroxide or a layered silicate and a polyacrylonitrile, which is at least partially decomposed to graphene layers.

WOLF A, LOLLI G, MLECZKO L, SCHLUETER O F, SCHLUETER O F K, SCHLUTER O F

Electronic device e.g. organic thin-film transistor, photovoltaic cell, image scanner, memory device, useful for forming semiconducting layer on substrate comprises semiconducting layer containing organic semiconductor and graphene.

WU Y, HU N, LIU P, MAHABADI H K, SMITH P, BARANYI G, HU N X, SMITH P F