国家/地区 世界知识产权组织（69）
IPC部 B（69）
IPC大类 C01（69） B82（62） H01（41）
B32（22） C23（17） B01（11）
C07（9） B05（8） C09（7）
C08（5） C25（5） C30（5）
G01（4） B44（3） G02（3）
IPC小类 C01B（69）
IPC C01B031/04（69）
发明人 AFZALIARDAKANI A（3） TOUR J M（3） BACSA R（2）
BAE S K（2） COLLINS W R（2） DING G（2）
FENG X（2） GOODS J B（2） HONG B H（2）
JIANG M（2） KIM H K（2） KWAK J（2）
KWON S（2） LEWANDOWSKI W（2） LIU Z（2）
公开年 2012（35） 2011（18） 2013（16）
申请年 2011（69）
专利权人 EMPIRE TECHN.（4） INT BUSINESS.（4） CENT NAT REC.（3） HANWHA TECHW.（3）
SAMSUNG TECH.（3） UNIV RICE WI.（3） UNIV SINGAPO.（3） UNIV SINGAPO.（3）
CHINESE ACAD.（2） CNRS CENT NA.（2） EGYPT NANOTE.（2） GRAPHENE SQU.（2）
INST NAT POL.（2） MASSACHUSETT.（2） MAX PLANCK G.（2） SHANGHAI INS.（2）
TOYOTA CHUO .（2） UNIST ACADIN.（2） UNIV ILLINOI.（2） UNIV MANCHES.（2）

Coproducing carbon nanotube and graphene used in polymer matrix, by decomposition at high temperature of carbon source in gas state, comprises contacting carbon source with catalyst comprising mixture of active catalyst-A and catalyst-B.

BEAUSOLEIL J, SERP P, BACSA R, CAUSSAT B

Producing graphene comprises contacting solid catalyst in divided state comprising mixed oxide with gaseous composition flow comprising carbon source, where solid catalyst has single crystal structure and average crystalline domain size.

BACSA R, SERP P

Preparing graphene i.e. free of metal contamination and magnetic and organic impurities, used to make battery, comprises reacting graphene oxide dispersion in a solvent, with tin compound and optionally with acid compound, and acid washing.

DUBOIS L, GAMBARELLI S, NANJUNDAN A

Isocyanate group-modified carbon material contains diisocyanate compound in which isocyanate group couples with graphene-type carbon material.

WADA T, TSUBOKAWA N, TAKUYA W

Producing graphene nanomesh based charge sensor, by generating holes in graphene to create graphene nanomesh, passivating edge of each hole of mesh, functionalizing passivated edge of each of holes of nanomesh with chemical compound.

AFZALIARDAKANI A, HAN S, KASRY A, MAAROUF A, MARTYNA G J, NISTOR R, TSAI H

Formation of patterned graphene layer on substrate used for low-noise amplifier, involves forming patterned structure(s) of carbide-forming metal or metal-containing alloy on substrate, applying layer of graphene and heating.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K, AFZALIARDAKANI A C O I

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Manufacture of graphene nano tape for electronic circuit, involves heating precursor material in vacuum in presence of anisotropic metal having specified surface redox potential.

ZHONG D, CHI L, ZACHARIAS H, FUCHS H, MUELLEN K, FENG X, MULLEN K, CHII1 4 L

Manufacture of graphene thin film for transparent electrode, involves causing deposition plate which contacts with substrate to perform reciprocating linear motion above substrate, and coating graphene oxide solution.

CHANG S T, KO Y U, TAE J S, UN K Y, KO Y

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A