国家/地区 世界知识产权组织（87）
IPC部 C（87）
IPC大类 C01（87） B82（62） H01（45）
B32（22） C23（22） B01（11）
C07（9） B05（8） C08（7）
C09（7） C25（6） C30（6）
G01（5） B44（3） C04（3）
IPC小类 C01B（87）
IPC C01B031/04（87）
发明人 QU Y（6） AFZALIARDAKANI A（3） BAE S K（3）
HONG B H（3） TOUR J M（3） WON D（3）
WON D K（3） YUAN D（3） AHN J（2）
AHN J H（2） BACSA R（2） BAE S（2）
CHO S（2） COLLINS W R（2） DING G（2）
公开年 2012（43） 2011（26） 2013（18）
申请年 2011（87）
专利权人 WUXI DILIUYU.（6） WUXI SIXTH E.（6） CENT NAT REC.（4） EMPIRE TECHN.（4）
HANWHA TECHW.（4） INT BUSINESS.（4） SAMSUNG TECH.（4） CNRS CENT NA.（3）
UNIV MANCHES.（3） UNIV PENNSYL.（3） UNIV RICE WI.（3） UNIV SINGAPO.（3）
UNIV SINGAPO.（3） CHINESE ACAD.（2） EGYPT NANOTE.（2） GRAPHENE SQU.（2）
INST NAT POL.（2） JOHNSON A T（2） MASSACHUSETT.（2） MAX PLANCK G.（2）

Coproducing carbon nanotube and graphene used in polymer matrix, by decomposition at high temperature of carbon source in gas state, comprises contacting carbon source with catalyst comprising mixture of active catalyst-A and catalyst-B.

BEAUSOLEIL J, SERP P, BACSA R, CAUSSAT B

Manufacture of graphene on polycrystalline silicon carbide used as bearing element in mechanical engineering, involves polishing silicon carbide components, cleaning, and graphitizing polished surface by annealing.

BENNEWITZ R, ASLAN M, WAEHLISCH C F

Producing graphene comprises contacting solid catalyst in divided state comprising mixed oxide with gaseous composition flow comprising carbon source, where solid catalyst has single crystal structure and average crystalline domain size.

BACSA R, SERP P

Preparing graphene i.e. free of metal contamination and magnetic and organic impurities, used to make battery, comprises reacting graphene oxide dispersion in a solvent, with tin compound and optionally with acid compound, and acid washing.

DUBOIS L, GAMBARELLI S, NANJUNDAN A

Isocyanate group-modified carbon material contains diisocyanate compound in which isocyanate group couples with graphene-type carbon material.

WADA T, TSUBOKAWA N, TAKUYA W

Producing graphene nanomesh based charge sensor, by generating holes in graphene to create graphene nanomesh, passivating edge of each hole of mesh, functionalizing passivated edge of each of holes of nanomesh with chemical compound.

AFZALIARDAKANI A, HAN S, KASRY A, MAAROUF A, MARTYNA G J, NISTOR R, TSAI H

Formation of patterned graphene layer on substrate used for low-noise amplifier, involves forming patterned structure(s) of carbide-forming metal or metal-containing alloy on substrate, applying layer of graphene and heating.

AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K, AFZALIARDAKANI A C O I

Manufacturing film of graphene, comprises depositing metal layer on surface of substrate, and continuously realizing buried carbon rich area inside metal layer by creating and maintaining carbon rich area so as to form film of graphene.

COJOCARU C

Forming graphene layer on surface of substrate, comprises forming silicon-carbide film on free surface of silicon layer and gradually heating substrate until silicon of first row of atoms of silicon-carbide film is sublimated.

OUERGHI A

Manufacture of graphene nano tape for electronic circuit, involves heating precursor material in vacuum in presence of anisotropic metal having specified surface redox potential.

ZHONG D, CHI L, ZACHARIAS H, FUCHS H, MUELLEN K, FENG X, MULLEN K, CHII1 4 L