国家/地区 日本（5） 美国（3）
IPC部 B（5）
IPC大类 B32（5）
IPC小类 B32B（5）
IPC B32B009/00（5）
发明人 FUKIDOME H（3） MIHASHI F（3） MITSUHASHI F（3）
SUEMITSU M（3） TATENO Y（3） UENO M（3）
OKADA M（2）
公开年 2017（5）
申请年 2016（2）  2017（2） 
专利权人 SUMITOMO ELE.（3） UNIV TOHOKU（3）

Stacked body for use in electronic device, has exposed surface which is being main surface opposite to substrate, and regions each including graphene layers and having circumcircle with predetermined diameter range.

OKADA M, MITSUHASHI F, UENO M, TATENO Y, SUEMITSU M, FUKIDOME H, MIHASHI F

Stacked body used in electronic device such as transistor ,has graphene film arranged on first main surface and having atomic arrangement oriented in relation to atomic arrangement of silicon carbide forming substrate.

OKADA M, MITSUHASHI F, TATENO Y, UENO M, SUEMITSU M, FUKIDOME H, MIHASHI F

Manufacture of graphene substrate involves laminating layer comprising catalytic metal, laminating layer on surface side of above layer, heat treating obtained layer, and cooling to form graphene between substrate and layer.

NARUTSUKA S, YAMADA J

Laminated body for use in FET, has graphene film fixed on main surface of substrate portion, where film comprises atomic arrangement and exposed surface of graphene film is main surface of graphene film opposite to substrate portion.

MITSUHASHI F, ISHIZUKA T, UENO M, TSUKUDA Y, TATENO Y, SUEMITSU M, FUKIDOME H, NAGASAWA H, MIHASHI F

Composite material used for manufacturing graphene film, consists of single-crystal sapphire substrate having off-angle degree of specified value, metal film and graphene film, in order.

AOTA NATSUKO, AIDA HIDEO, TACHIBANA MASARU, MORISAKO SHIYO, AOTA N, AIDA H, TACHIBANA M, MORISAKO S