国家/地区 中国（25） 美国（10） 韩国（6） 世界知识产权组织（3）
IPC部 C（35）
IPC大类 C01（35） C23（13） H01（12）
B82（4） B01（3） C30（3）
H05（3） C08（2）
IPC小类 C01B（35） C23C（13） H01L（10）
B82Y（4） B01J（3） C30B（3）
C08K（2） C08L（2） H01G（2）
H01J（2） H05K（2）
IPC C01B032/186（35）
发明人 BAI Y（3） CAI J（3） WANG J（3）
XIE G（3） BARAKET M（2） BYUN K（2）
BYUN K E（2） ELSAYED K A M（2） HAO Z（2）
LEE C（2） LEE C S（2） MAAROUF A A（2）
PHILPOTT R（2） SHERRILL V（2） SHIN K（2）
公开年 2023（35）
申请年 2022（35）
专利权人 SAMSUNG ELEC.（3） UNIV SOUTHWE.（3） GEN GRAPHENE.（2） GUANGDONG MO.（2）
UNIV IMAM AB.（2）

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

System for forming graphene used in different types of commercial applications, e.g. batteries, comprises substrate holder designed for holding substrate sheet, outfeed tunnels provided adjacent to substrate holder, multiple processing sub-enclosures provided adjacent to outfeed tunnels.

SHERRILL V, BARAKET M, PHILPOTT R

Electromagnetic interference suppressing material used as radio wave absorber, noise suppression sheet, semiconductor sealing material, sealing sheet, and wire coating material, comprises base material containing organic substances and inorganic substances, and powdered carbon material.

NISHIHARA H, YOSHIDA S, UCHIDA K

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Production device with graphene recycling structure, has graphene top portion that is fixedly connected with gas conveying box, and inner top graphene of production device main portion is connected with air inlet pipe.

ZHU J

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Preparing secondary enhanced graphene gas gel useful in shoes, comprises introducing substrate layer on prepared graphene gas gel surface, performing chemical vapor deposition reaction and growing sheet layer or spherical graphene aggregate on surface of substrate layer.

ZHENG L, SHEN Y, ZHENG Y, WU L, WANG H

Preparing graphene crystal using plasma enhanced chemical vapor deposition device involves placing insulating substrate in synthesis chamber, pumping synthesis chamber to vacuum, introducing growth gas, generating plasma and transversely growing graphene small crystal nucleus on insulating substrate.

MA S, LIU B

Semiconductor device comprises interconnection structure comprises seed layer disposed on first conductive layer, seed layer including graphene; and metal migration barrier layer disposed on seed layer, metal migration barrier layer including MXene.

HAN J H, KOO W T, HAN Z, KOO W, TAE K W

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K